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74AHCT1G02DBVTG4

Texas Instruments

74AHCT1G02DBVTG4 by Texas Instruments

74AHCT1G02DBVTG4 by Texas Instruments is a logic gate with 2 inputs, 8.5 ns propagation delay, and 5V nominal voltage. It is used in industrial applications due to its CMOS technology, -40 to 85 °C operating temperature range, and compact package style for space-constrained designs.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 4,034 parts In-Stock

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Digiode

USA . 2,371 parts In-Stock

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Northwest PG Solutions

USA . 2,017 parts In-Stock

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$2.623

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$2.623

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AZTECH Wire

Italy . 526 parts In-Stock

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$16.983

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Parana Technologies

USA . 1,517 parts In-Stock

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$17.638

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ChromeModa Solutions

Germany . 2,411 parts In-Stock

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$19.591

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$16.065

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IDEA Electronic Components Group

UK . 556 parts In-Stock

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$18.611

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$17.632

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556

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One Stop Electronics

USA . 803 parts In-Stock

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Corphita

USA . 4,220 parts In-Stock

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Microchip USA

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DigiPath Technology Company

USA . 1,636 parts In-Stock

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Native Components

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Overview

Discover the superior quality and reliability of the 74AHCT1G02DBVTG4 by Texas Instruments, a leading manufacturer in the industry. This logic gates device is perfect for a wide range of applications, offering fast propagation delay and low power consumption. With its small outline and dual terminal position, this product provides exceptional value and performance for your projects. Upgrade your designs with the cutting-edge technology of Texas Instruments and experience the benefits of this top-of-the-line component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and reliability of the product in various environmental conditions.

Propagation Delay At Nominal Supply: 8.5 ns

The low propagation delay ensures fast response times, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on printed circuit boards, saving space and simplifying assembly processes.

No. of Inputs: 2

With two inputs, this logic gate provides flexibility in performing different logic operations, making it versatile for various design requirements.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V, this logic gate is compatible with standard digital systems, ensuring seamless integration.

Load Capacitance (CL): 50 pF

With a specified load capacitance, this logic gate can drive capacitive loads efficiently without compromising signal integrity.

Power Supplies (V): 5

Having a power supply voltage of 5V ensures stable operation and performance of the logic gate within the specified voltage range.

No. of Terminals: 5

The compact design with 5 terminals allows for easy connectivity and integration into circuit designs, making it suitable for space-constrained applications.

Maximum I (ol): 8 Amp

With a high maximum output current capability, this logic gate can drive larger loads and provide robust signal drive, enhancing overall system performance.

Propagation Delay (tpd): 8.5 ns

The specified propagation delay of 8.5 ns ensures quick response times, enabling efficient operation in time-critical applications.

Maximum Operating Temperature: 85 °C

The wide maximum operating temperature range of 85°C allows for reliable operation in various environmental conditions, enhancing the versatility of the product.

Output Characteristics: 3-STATE

The 3-state output capability enables the logic gate to provide three output states (high, low, and high-impedance), offering enhanced flexibility in circuit design and functionality.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable performance even in cold environments, making this logic gate suitable for a wide range of applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of nickel/palladium/gold as terminal finish materials enhances conductivity, corrosion resistance, and reliability of the terminals for long-term performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting and connecting the logic gate in various orientations, making it easy to integrate into different circuit layouts.

Maximum Seated Height: 1.45 mm

The low maximum seated height allows for a compact and slim profile, making this logic gate suitable for applications with height constraints.

Width: 1.6 mm

The narrow width of 1.6 mm enables space-saving integration of the logic gate into densely populated circuit boards, optimizing board layout and design.

Minimum Supply Voltage (Vsup): 4.5 V

The specified minimum supply voltage of 4.5V ensures reliable operation within the recommended voltage range, preventing undervoltage issues and ensuring proper functionality.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this logic gate can withstand high-temperature soldering processes during assembly without compromising its performance or reliability.

Length: 2.9 mm

The compact length of 2.9 mm helps in saving PCB space and allows for efficient placement of the logic gate in tight layouts, enhancing overall design flexibility.

Temperature Grade: INDUSTRIAL

Designed for industrial temperature ranges, this logic gate can operate reliably in harsh environmental conditions typically encountered in industrial applications.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption, high noise immunity, and compatibility with a wide range of digital systems, making this logic gate energy-efficient and versatile.

Terminal Form: GULL WING

The gull wing terminal form provides secure mechanical and electrical connections during soldering, ensuring reliable performance and ease of assembly on PCBs.

Packing Method: TR

Packaged in tape and reel format, this logic gate facilitates automated pick-and-place assembly processes, increasing production efficiency and reducing labor costs.

Terminal Pitch: 0.95 mm

With a small terminal pitch of 0.95 mm, this logic gate allows for high-density mounting on PCBs, improving board space utilization and enabling compact designs.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V ensures the logic gate's robustness against overvoltage conditions, protecting the device from potential damage and ensuring reliable operation.

Maximum Power Supply Current (ICC): 0.01 mA

With a low maximum power supply current of 0.01 mA, this logic gate helps in minimizing power consumption, making it ideal for battery-operated applications or energy-efficient systems.

Technical Specifications

Logic Gates 74AHCT1G02DBVTG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

8.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

74AHCT1G02DBVTG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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