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66AK2H14BAAWA24

Texas Instruments

66AK2H14BAAWA24 by Texas Instruments

The Texas Instruments 66AK2H14BAAWA24 microprocessor features a 64-bit external data bus width, 16-bit address bus width, and integrated cache. Ideal for applications requiring high-speed processing and low power consumption. Suitable for use in various electronic devices due to its compact square package shape and grid array style with 1517 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,378 parts In-Stock

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Digiode

USA . 1,181 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 117 parts In-Stock

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$5.760

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117

$5.760

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AZTECH Wire

Italy . 882 parts In-Stock

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$13.869

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Parana Technologies

USA . 1,999 parts In-Stock

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$29.861

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$64.124

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$29.861

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One Stop Electronics

USA . 377 parts In-Stock

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$32.000

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377

$32.000

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DigiPath Technology Company

USA . 1,363 parts In-Stock

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$32.881

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$30.250

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1,363

$32.881

$30.250

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ChromeModa Solutions

Germany . 3,580 parts In-Stock

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$33.552

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$27.513

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$33.552

$27.513

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IDEA Electronic Components Group

UK . 858 parts In-Stock

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$33.552

100+ parts

$31.874

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$30.197

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858

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$30.197

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Microchip USA

USA . 2,708 parts In-Stock

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Northwest PG Solutions

USA . 2,097 parts In-Stock

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$5.645

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Corphita

USA . 305 parts In-Stock

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Overview

Unlock unparalleled performance and efficiency with the Texas Instruments 66AK2H14BAAWA24 microprocessor. Designed with precision by a trusted industry leader, this innovative chip delivers seamless integration and cutting-edge technology for a wide range of applications. From automotive to industrial automation, this microprocessor offers unmatched value and reliability, making it the top choice for customers seeking superior quality and performance. Upgrade your systems today with the Texas Instruments 66AK2H14BAAWA24 and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material that helps in reducing overall weight and ensuring long-term reliability of the product.

Integrated Cache: YES

Enhanced performance with fast access to frequently used data and instructions, improving overall efficiency.

Maximum Supply Voltage: 1.05 V

Efficient power consumption and lower heat generation, which can lead to energy savings and increased lifespan of the processor.

Address Bus Width: 16

Allows for efficient handling of memory addresses and data, improving overall processing speed and performance.

No. of Terminals: 1517

High number of terminals for connecting various components, enabling versatile use and compatibility with different systems.

Max Seated Height: 3.75 mm

Compact design with low profile for easy integration in space-constrained environments.

Peripheral IC Type: MICROPROCESSOR, RISC

RISC architecture for efficient processing of instructions, resulting in high performance and throughput.

Technology: CMOS

CMOS technology for low power consumption and high noise immunity, leading to energy efficiency and reliable operation.

Nominal Supply Voltage: 1 V

Stable supply voltage for consistent performance and reduced risk of damage to the processor.

Speed: 1400 rpm

High processing speed for quick execution of tasks and demanding applications.

Technical Specifications

Microprocessors 66AK2H14BAAWA24 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

External Data Bus Width:

64

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B1517

JESD-609 Code:

e1

Length:

40 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

245

Maximum Seated Height:

3.75 mm

Speed:

1400 rpm

Maximum Supply Voltage:

1.05 V

Minimum Supply Voltage:

.95 V

Nominal Supply Voltage:

1 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

40 mm

Peripheral IC Type:

Trade Compliance

66AK2H14BAAWA24 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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