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66AK2E05DABDA25

Texas Instruments

66AK2E05DABDA25 by Texas Instruments

The Texas Instruments 66AK2E05DABDA25 microprocessor features a 16-bit address bus width and integrated cache. With a max supply voltage of 1.05 V, it is ideal for applications requiring high-speed processing in compact spaces. This CMOS technology-based processor also supports boundary scan and low power mode for efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,891 parts In-Stock

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Digiode

USA . 1,679 parts In-Stock

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1,679

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Distributors (Availability)

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AZTECH Wire

Italy . 589 parts In-Stock

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$4.888

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589

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One Stop Electronics

USA . 1,134 parts In-Stock

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$25.000

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Parana Technologies

USA . 954 parts In-Stock

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$73.026

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954

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DigiPath Technology Company

USA . 1,027 parts In-Stock

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$80.411

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1,027

$80.411

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ChromeModa Solutions

Germany . 2,286 parts In-Stock

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$82.052

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$67.283

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2,286

$82.052

$67.283

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IDEA Electronic Components Group

UK . 1,408 parts In-Stock

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$82.052

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$77.949

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$73.847

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Corphita

USA . 2,868 parts In-Stock

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Northwest PG Solutions

USA . 2,047 parts In-Stock

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Native Components

USA . 409 parts In-Stock

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Overview

Unlock unparalleled processing power with the 66AK2E05DABDA25 by Texas Instruments. Crafted with precision and expertise, this microprocessor delivers exceptional performance, reliability, and efficiency. Whether it's powering cutting-edge technology or driving innovative solutions, this device is a game-changer in various applications. Experience seamless operation, enhanced functionality, and unrivaled versatility with this high-quality product. Elevate your projects to new heights with the value, benefits, and advantages that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Integrated Cache: YES

Integrated cache enhances the processing speed and efficiency of the microprocessor, making it a high-performance choice.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and simplifying assembly.

Maximum Supply Voltage: 1.05 V

The low maximum supply voltage helps in minimizing power consumption and heat generation, improving energy efficiency.

Address Bus Width: 16

The wide address bus width allows for efficient communication with other components, enabling fast data transfer and processing.

Package Shape: SQUARE

The square package shape helps in optimizing space utilization and layout design on circuit boards.

No. of Terminals: 1089

With a high number of terminals, this microprocessor can support complex connectivity requirements and facilitate advanced functionalities.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array with fine pitch package style offers reliability in connectivity and robust mechanical support for the microprocessor.

Minimum Supply Voltage: 0.95 V

The low minimum supply voltage allows for operation at lower power levels, contributing to energy efficiency and extended battery life in devices.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy soldering and connection to circuit boards, streamlining the assembly process.

Maximum Seated Height: 3.55 mm

The maximum seated height is compact, enabling integration in slim devices and reducing overall product dimensions.

Width: 27 mm

The moderate width of the microprocessor allows for versatile placement and positioning within electronic systems.

Boundary Scan: YES

Boundary scan capability assists in diagnosing and testing the microprocessor during manufacturing and troubleshooting, enhancing reliability.

External Data Bus Width: 16

The external data bus width of 16 bits facilitates high-speed data transfer and processing between the microprocessor and external devices.

Length: 27 mm

The compact length of the microprocessor contributes to space-efficient design and placement in various electronic applications.

Peripheral IC Type: MICROPROCESSOR, RISC

Based on RISC architecture, the microprocessor offers high performance, reduced instruction set complexity, and efficient data processing capabilities.

Technology: CMOS

CMOS technology ensures low power consumption, high speed, and reliable operation of the microprocessor, making it suitable for diverse applications.

Terminal Form: BALL

The ball terminal form provides secure connections and efficient heat dissipation, enhancing the overall reliability and performance of the microprocessor.

Nominal Supply Voltage: 1 V

The nominal supply voltage of 1V ensures stable and efficient operation of the microprocessor, supporting optimal performance in electronic devices.

Terminal Pitch: 0.8 mm

The fine terminal pitch of 0.8mm enables compact design and precise connections, enhancing the overall reliability and functionality of the microprocessor.

Format: FLOATING POINT

The floating-point format supports advanced mathematical calculations and processing, making the microprocessor suitable for scientific and computational applications.

Speed: 1250 rpm

With a speed of 1250 rpm, the microprocessor offers fast data processing and efficient performance in demanding computing tasks and applications.

Low Power Mode: YES

The low power mode feature helps in reducing power consumption during idle or low-demand operations, maximizing energy efficiency and extending battery life.

Technical Specifications

Microprocessors 66AK2E05DABDA25 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B1089

Length:

27 mm

Low Power Mode:

YES

No. of Terminals:

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Maximum Seated Height:

3.55 mm

Speed:

1250 rpm

Maximum Supply Voltage:

1.05 V

Minimum Supply Voltage:

.95 V

Nominal Supply Voltage:

1 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

27 mm

Peripheral IC Type:

Trade Compliance

66AK2E05DABDA25 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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