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66AK2G02ZBBA60

Texas Instruments

66AK2G02ZBBA60 by Texas Instruments

The Texas Instruments 66AK2G02ZBBA60 microprocessor features a 32-bit external data bus width, operates at a max clock frequency of 26 MHz, and has an integrated cache. Ideal for automotive applications, this CMOS technology-based processor offers low power mode and boundary scan capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,979 parts In-Stock

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Digiode

USA . 556 parts In-Stock

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556

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One Stop Electronics

USA . 1,396 parts In-Stock

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$3.000

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Native Components

USA . 209 parts In-Stock

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$5.060

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AZTECH Wire

Italy . 423 parts In-Stock

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$13.119

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Parana Technologies

USA . 249 parts In-Stock

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$23.153

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$23.788

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249

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ChromeModa Solutions

Germany . 2,317 parts In-Stock

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$26.015

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$21.332

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$26.015

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IDEA Electronic Components Group

UK . 625 parts In-Stock

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$26.015

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$24.714

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$23.414

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$26.015

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Northwest PG Solutions

USA . 1,503 parts In-Stock

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$4.959

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Corphita

USA . 1,306 parts In-Stock

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DigiPath Technology Company

USA . 2 parts In-Stock

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$23.455

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Overview

Experience next-level performance with the 66AK2G02ZBBA60 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality microprocessors that are perfect for a variety of applications. With integrated cache and low power mode, this product offers unmatched efficiency and reliability. Whether you're working on automotive projects or need a powerful solution for your next RISC application, the 66AK2G02ZBBA60 is the perfect choice. Upgrade your technology today and unlock a world of possibilities with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material allows for a lightweight and durable package, making it ideal for portable devices or applications where weight is a concern.

Integrated Cache: YES

Having integrated cache helps improve performance by reducing the time needed to access frequently used data and instructions.

Maximum Supply Voltage: 0.95 V

The low maximum supply voltage helps in reducing power consumption and heat generation, making the product energy-efficient.

Address Bus Width: 16

With a wide address bus width, the processor can access a larger memory space, improving overall performance and efficiency.

No. of Terminals: 625

The high number of terminals allows for more connections and functionalities, making the processor versatile and suitable for complex applications.

Maximum Clock Frequency: 26 MHz

The high maximum clock frequency enables fast data processing and execution speeds, making the product suitable for applications requiring real-time data processing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the processor energy-efficient and reliable in various operating conditions.

Technical Specifications

Microprocessors 66AK2G02ZBBA60 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

Maximum Clock Frequency:

26 MHz

External Data Bus Width:

32

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B625

Length:

21 mm

Low Power Mode:

YES

No. of Terminals:

625

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.7 mm

Speed:

600 rpm

Maximum Supply Voltage:

.95 V

Minimum Supply Voltage:

.85 V

Nominal Supply Voltage:

.9 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

21 mm

Peripheral IC Type:

Trade Compliance

66AK2G02ZBBA60 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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