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66AK2G02ZBB60

Texas Instruments

66AK2G02ZBB60 by Texas Instruments

The Texas Instruments 66AK2G02ZBB60 microprocessor features a 32-bit external data bus width, 16-bit address bus width, and max clock frequency of 26 MHz. Ideal for low power applications, this CMOS technology-based processor is designed for use in microprocessor systems requiring high-speed processing capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,320 parts In-Stock

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Digiode

USA . 2,993 parts In-Stock

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2,993

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Distributors (Availability)

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Native Components

USA . 958 parts In-Stock

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$6.490

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958

$6.490

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One Stop Electronics

USA . 804 parts In-Stock

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$7.000

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$7.000

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AZTECH Wire

Italy . 895 parts In-Stock

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$9.999

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895

$9.999

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Parana Technologies

USA . 221 parts In-Stock

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$34.769

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221

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DigiPath Technology Company

USA . 2,188 parts In-Stock

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$38.285

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$35.222

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2,188

$38.285

$35.222

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ChromeModa Solutions

Germany . 6,563 parts In-Stock

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$39.066

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$32.034

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IDEA Electronic Components Group

UK . 76 parts In-Stock

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$39.066

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$37.113

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$35.159

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Corphita

USA . 981 parts In-Stock

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Northwest PG Solutions

USA . 474 parts In-Stock

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$6.360

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Overview

Experience the cutting-edge technology of Texas Instruments with the 66AK2G02ZBB60 microprocessor. This high-quality product boasts integrated cache, low power mode, and a maximum clock frequency of 26 MHz. Ideal for a wide range of applications, this microprocessor offers unparalleled performance and reliability. Whether you're working on embedded systems, networking equipment, or industrial automation, the 66AK2G02ZBB60 from Texas Instruments delivers value and benefits that exceed expectations. Elevate your projects to the next level with this top-of-the-line microprocessor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Integrated Cache: YES

Having integrated cache improves the performance of the microprocessor by reducing access time to frequently used data.

Surface Mount: YES

Surface mount capability makes the installation process easy and efficient, saving space and facilitating automated assembly.

Maximum Supply Voltage: 0.95 V

The low maximum supply voltage reduces power consumption, making the product energy-efficient.

Address Bus Width: 16

A wider address bus allows for accessing a larger memory range, enhancing the processing capabilities of the microprocessor.

Package Shape: SQUARE

The square shape helps in efficient arrangement on circuit boards and ensures uniform heat dissipation.

No. of Terminals: 625

The high number of terminals enables connectivity to various components, enhancing the flexibility and functionality of the product.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array style with low profile and fine pitch design allows for compact packaging and optimal signal transmission, reducing signal distortion.

Minimum Supply Voltage: 0.85 V

The low minimum supply voltage ensures stable performance even under low power conditions, making the product versatile and reliable.

Terminal Position: BOTTOM

Having terminals positioned at the bottom simplifies the connection process and also improves thermal management.

Maximum Seated Height: 1.7 mm

The low seated height saves space in tight layouts and ensures better airflow for cooling.

Width: 21 mm

The compact width facilitates easy integration into various devices, enabling more design flexibility.

Boundary Scan: YES

Boundary scan support simplifies testing and debugging, enhancing the usability and maintenance of the product.

External Data Bus Width: 32

A wider external data bus allows for faster data transfer between the microprocessor and external components, improving overall performance.

Maximum Clock Frequency: 26 MHz

The high maximum clock frequency enables faster processing speeds, ideal for demanding applications.

Length: 21 mm

The compact length complements the width, making the product suitable for space-constrained applications.

Peripheral IC Type: MICROPROCESSOR, RISC

Being a RISC microprocessor enables faster execution of instructions, making it suitable for high-performance computing tasks.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and faster switching speeds, improving overall efficiency.

Terminal Form: BALL

Having terminals in ball form simplifies soldering and enhances connectivity, ensuring reliable operation.

Nominal Supply Voltage: 0.9 V

The nominal supply voltage strikes a balance between performance and power efficiency, making it an optimal choice for various applications.

Terminal Pitch: 0.8 mm

The small terminal pitch allows for dense packaging and efficient signal routing, contributing to a compact and high-performance design.

Format: FLOATING POINT

The floating-point format allows for precise arithmetic calculations, essential for applications requiring high accuracy and computational power.

Speed: 600 rpm

The high speed of 600 rpm ensures quick data processing and rapid response times, improving overall system performance.

Low Power Mode: YES

The low power mode provides energy-saving benefits, extending battery life in portable devices and reducing overall power consumption.

Technical Specifications

Microprocessors 66AK2G02ZBB60 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

16

Boundary Scan:

YES

Maximum Clock Frequency:

26 MHz

External Data Bus Width:

32

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B625

Length:

21 mm

Low Power Mode:

YES

No. of Terminals:

625

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.7 mm

Speed:

600 rpm

Maximum Supply Voltage:

.95 V

Minimum Supply Voltage:

.85 V

Nominal Supply Voltage:

.9 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

21 mm

Peripheral IC Type:

Trade Compliance

66AK2G02ZBB60 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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