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Z0410NE

STMicroelectronics

Z0410NE by STMicroelectronics

Z0410NE by STMicroelectronics is a single TRIAC designed for AC applications, featuring a max RMS on-state current of 4 A and a repetitive peak off-state voltage of 800 V. It operates b/w -40 °C to 125°C with a gate trigger current of 25 mA. Ideal for controlling power in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,983 parts In-Stock

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2,983

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A&K Electronics

USA . 860 parts In-Stock

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860

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Rotakorn

Sweden . 860 parts In-Stock

1+ parts

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860

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Bristol Electronics

USA . 860 parts In-Stock

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860

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Vyrian

USA . 276 parts In-Stock

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276

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Anansix

USA . 81 parts In-Stock

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81

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,750 parts In-Stock

1+ parts

$1.920

100+ parts

-

1k+ parts

$1.728

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1,750

$1.920

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$1.728

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MKK Technologies

India . 1,829 parts In-Stock

1+ parts

$3.611

100+ parts

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1,829

$3.611

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DigiPath Technology Company

USA . 1,829 parts In-Stock

1+ parts

$3.611

100+ parts

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1,829

$3.611

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Corphita

USA . 4,953 parts In-Stock

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4,953

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Parana Technologies

USA . 1,255 parts In-Stock

1+ parts

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100+ parts

$2.296

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1,255

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$2.296

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Overview

Elevate your projects with the Z0410NE TRIAC from STMicroelectronics, a leader in semiconductor innovation. Designed for reliability and versatility, this high-performance device excels in AC control applications, ensuring smooth operation even in demanding conditions. With its robust construction and impressive thermal range, the Z0410NE delivers unmatched efficiency and durability, making it the ideal choice for engineers seeking quality solutions that enhance performance and longevity. Trust STMicroelectronics to power your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and reliability in various environmental conditions, making it suitable for long-term applications.

Maximum DC Gate Trigger Current: 25 mA

A maximum gate trigger current of 25 mA allows for easy interfacing with low-current control circuits, enhancing versatility.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it user-friendly for engineers.

Package Shape: RECTANGULAR

The rectangular package shape offers efficient space utilization on PCB layouts, facilitating compact design.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides robust mechanical stability and ease of soldering, ensuring strong connections.

Maximum Leakage Current: 0.2 mA

A low maximum leakage current of 0.2 mA minimizes power loss and improves energy efficiency in applications.

No. of Terminals: 3

With three terminals, this TRIAC enables versatile circuit configurations for a wide range of applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure installation and optimal thermal dissipation in various mounting scenarios.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C allows for reliable performance in high-temperature environments, increasing device longevity.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

As a 4 quadrant logic level TRIAC, this component can handle both positive and negative voltages, enhancing its application range.

Minimum Operating Temperature: -40 °C

The ability to operate down to -40 °C ensures functionality in extreme cold conditions, making it suitable for various environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, resulting in reliable electrical connections.

Terminal Position: SINGLE

A single terminal position design allows for straightforward installation and reduces the complexity in circuit layout.

Maximum RMS On-state Current: 4 A

A maximum RMS on-state current of 4 A enables this TRIAC to handle significant load currents, ideal for control applications.

Maximum DC Gate Trigger Voltage: 2 V

With a low gate trigger voltage of 2 V, this TRIAC easily interfaces with low-voltage control systems, broadening its usability.

Repetitive Peak Off-state Voltage: 800 V

A high repetitive peak off-state voltage of 800 V ensures reliability under high voltage conditions, making it suitable for demanding applications.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/us

A minimum critical rate of rise of off-state voltage of 30 V/us provides reliable operation and effective voltage handling capabilities.

Maximum Holding Current: 50 mA

A maximum holding current of 50 mA allows for effective control of small loads while minimizing the risk of false triggering.

Technical Specifications

Triode For Alternating Current (TRIAC) Z0410NE attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-202

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

Z0410NE Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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