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TPDV840

STMicroelectronics

TPDV840 by STMicroelectronics

TPDV840 by STMicroelectronics is a single TRIAC designed for AC control applications, featuring a max RMS on-state current of 40 A and an off-state voltage of 800 V. It operates efficiently b/w -40 °C to 125°C with a gate trigger current of 200 mA. Ideal for robust switching in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,632 parts In-Stock

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4,632

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Vyrian

USA . 1,869 parts In-Stock

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1,869

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Anansix

USA . 182 parts In-Stock

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182

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ECAB

Sweden . 46 parts In-Stock

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46

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LittleDiode

UK . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,929 parts In-Stock

1+ parts

$2.803

100+ parts

-

1k+ parts

$2.523

10k+ parts

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1,929

$2.803

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$2.523

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MKK Technologies

India . 90 parts In-Stock

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$5.271

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90

$5.271

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DigiPath Technology Company

USA . 90 parts In-Stock

1+ parts

$5.271

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90

$5.271

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Ampacity Inc.

Singapore . 648 parts In-Stock

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$8.100

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648

$8.100

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Corphita

USA . 1,740 parts In-Stock

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1,740

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Parana Technologies

USA . 60 parts In-Stock

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$3.352

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60

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$3.352

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Overview

Experience unmatched reliability and performance with the TPDV840 from STMicroelectronics—your go-to solution for TRIAC applications. Renowned for their quality, STMicroelectronics ensures this robust device handles up to 40 A while maintaining low leakage currents for enhanced efficiency. Ideal for home appliances, industrial controls, and lighting systems, the TPDV840 combines longevity with superior thermal management, delivering exceptional value that empowers your projects to shine bright.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures robust insulation and protection against environmental factors, enhancing durability.

Maximum DC Gate Trigger Current: 200 mA

A high gate trigger current allows for effective control over the device, making it suitable for demanding applications.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making this TRIAC easy to use in a variety of applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, contributing to compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures strong mechanical support and is ideal for high-current applications.

Maximum Leakage Current: 5 mA

A low maximum leakage current indicates efficient switching capabilities, minimizing power loss during operation.

Maximum Repetitive Peak Off-state Leakage Current: 20 uA

This very low leakage current enhances energy efficiency, making it suitable for energy-sensitive applications.

Number of Terminals: 3

Having three terminals provides flexibility in circuit design and allows for more versatile integration.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure mounting in applications, providing stability in high vibration environments.

Maximum Operating Temperature: 125 °C

Withstand high temperatures, making this TRIAC reliable for applications in harsh environments.

Trigger Device Type: ALTERNISTOR TRIAC

Being an alternistor TRIAC allows for high-speed operation and enhanced performance in AC control applications.

Minimum Operating Temperature: -40 °C

A wide operating temperature range allows for deployment in extreme conditions without performance degradation.

Terminal Finish: TIN LEAD

Tin-lead terminal finish enhances solderability and reliability in electrical connections.

Terminal Position: SINGLE

A single terminal position aids ease of handling and simplifies installation.

Maximum RMS On-state Current: 40 A

High RMS current capacity ensures effectiveness in high-power applications, capable of handling significant loads.

Maximum DC Gate Trigger Voltage: 1.5 V

This low triggering voltage improves control and reduces energy consumption during switching.

Case Connection: ISOLATED

An isolated case connection provides superior safety and reduces the risk of interference with other components.

Repetitive Peak Off-state Voltage: 800 V

A high off-state voltage rating allows this TRIAC to be used in demanding AC applications, further expanding its versatility.

Minimum Critical Rate of Rise of Commutation Voltage: 0.00001 V/us

A low rate of rise of commutation voltage ensures reliable switching performance in fast-operating circuits.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

A high rate of rise of off-state voltage enhances the TRIAC's ability to handle rapid voltage changes, improving output stability.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies compliance with rigorous safety standards, enhancing the product's credibility and acceptance in the market.

Technical Specifications

Triode For Alternating Current (TRIAC) TPDV840 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

.00001 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

200 mA

Maximum DC Gate Trigger Voltage:

1.5 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

5 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

40 A

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Off-state Leakage Current:

20 uA

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

TPDV840 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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