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TPDV1225

STMicroelectronics

TPDV1225 by STMicroelectronics

TPDV1225 by STMicroelectronics is a single TRIAC designed for AC applications, featuring a max RMS on-state current of 25 A and a repetitive peak off-state voltage of 1200 V. It operates b/w -40 °C to 125°C with a max gate trigger current of 150 mA. Ideal for controlling power in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,936 parts In-Stock

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Anansix

USA . 1,949 parts In-Stock

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1,949

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Digiode

USA . 1,084 parts In-Stock

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1,084

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ComSIT Distribution GmbH

Germany . 216 parts In-Stock

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ComSIT USA

USA . 201 parts In-Stock

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201

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ECAB

Sweden . 106 parts In-Stock

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106

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Zilex Electronics Inc.

Canada . 55 parts In-Stock

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LittleDiode

UK . 6 parts In-Stock

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IDEA Electronic Components Group

UK . 2,315 parts In-Stock

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$3.359

100+ parts

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$3.023

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2,315

$3.359

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$3.023

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MKK Technologies

India . 360 parts In-Stock

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$6.316

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$6.316

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DigiPath Technology Company

USA . 360 parts In-Stock

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$6.316

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360

$6.316

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Kepictronics

USA . 23,870 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Corphita

USA . 2,660 parts In-Stock

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Parana Technologies

USA . 593 parts In-Stock

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$4.016

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Overview

Unlock the power of reliable performance with the TPDV1225 from STMicroelectronics. This exceptional TRIAC solution ensures robust control in various applications, from lighting to motor management, providing outstanding durability and efficiency. With ST's renowned commitment to quality and innovation, you gain peace of mind knowing your projects are backed by superior technology. Experience enhanced reliability and maximum performance that elevate your designs above the rest!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making this TRIAC suitable for various applications.

Maximum DC Gate Trigger Current: 150 mA

A high DC gate trigger current capacity allows for reliable operation in applications requiring quick response, enhancing performance.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, making it easier to integrate into existing systems.

Package Shape: RECTANGULAR

The rectangular package shape is an efficient design that aids in space-saving on printed circuit boards (PCBs).

Terminal Form: THROUGH-HOLE

Through-hole terminals provide excellent mechanical strength and ease of soldering, ensuring secure connections in a circuit.

Maximum Leakage Current: 2 mA

A low maximum leakage current contributes to energy efficiency and reduces losses in the system, promoting better overall performance.

Maximum Repetitive Peak Off-state Leakage Current: 20 uA

Minimal off-state leakage current ensures reduced energy waste, thereby making this TRIAC an eco-friendly option.

No. of Terminals: 3

Having three terminals allows for versatile applications and better control over circuit functions.

Package Style (Meter): FLANGE MOUNT

The flange mount style facilitates easy and secure installation, ensuring reliable mechanical support in various settings.

Maximum Operating Temperature: 125 °C

A high operating temperature rating indicates robustness and suitability for high-heat applications, enhancing reliability.

Trigger Device Type: ALTERNISTOR TRIAC

The alternating current capability of an alternistor TRIAC allows it to handle AC loads efficiently, making it ideal for a wide range of applications.

Minimum Operating Temperature: -40 °C

The extended operating temperature range allows for operation in extreme conditions, ensuring reliability in diverse environments.

Terminal Finish: TIN LEAD

A tin-lead finish provides excellent solderability and corrosion resistance, enhancing long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout, making it easier for engineers to design and assemble PCBs.

Maximum RMS On-state Current: 25 A

With a high maximum RMS on-state current, this TRIAC can handle substantial loads, suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage allows for operation with low-power control signals, making it energy-efficient.

Case Connection: ISOLATED

An isolated case connection ensures safety and prevents electrical interference, crucial for reliable operation.

Repetitive Peak Off-state Voltage: 1200 V

A high off-state voltage rating allows this TRIAC to safely manage high-voltage applications, enhancing its versatility.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/μs

A high rate of commutation voltage rise ensures fast switching capabilities, ideal for dynamic circuit applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/μs

The ability to handle a fast off-state voltage rise ensures stable performance and enhances the TRIAC's reliability under varying conditions.

Reference Standard: UL RECOGNIZED

Being UL recognized provides assurance of compliance with safety standards, increasing trust and reliability in the product's usage.

Technical Specifications

Triode For Alternating Current (TRIAC) TPDV1225 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

150 mA

Maximum DC Gate Trigger Voltage:

1.5 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Off-state Leakage Current:

20 uA

Repetitive Peak Off-state Voltage:

1200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

TPDV1225 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-14-444-5744, 5961144445744

NIIN

144445744

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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