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TPDV240

STMicroelectronics

TPDV240 by STMicroelectronics

STMicroelectronics' TPDV240 is a TRIAC with 1.8V max on-state voltage, 200mA max DC gate trigger current, and 5mA max leakage current. It operates b/w -40 °C to 110°C, ideal for AC power control applications requiring up to 40A RMS on-state current and 200V repetitive peak off-state voltage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,115 parts In-Stock

1+ parts

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3,115

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Vyrian

USA . 2,417 parts In-Stock

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2,417

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Anansix

USA . 2,135 parts In-Stock

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2,135

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,233 parts In-Stock

1+ parts

$2.576

100+ parts

-

1k+ parts

$2.318

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2,233

$2.576

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$2.318

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MKK Technologies

India . 2,018 parts In-Stock

1+ parts

$4.844

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2,018

$4.844

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DigiPath Technology Company

USA . 2,018 parts In-Stock

1+ parts

$4.844

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2,018

$4.844

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Corphita

USA . 3,401 parts In-Stock

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3,401

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Parana Technologies

USA . 663 parts In-Stock

1+ parts

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100+ parts

$3.080

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663

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$3.080

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Overview

Unleash the power of reliable and efficient switching with the TPDV240 by STMicroelectronics. As a leader in semiconductor manufacturing, STMicroelectronics delivers top-notch quality products, and the TPDV240 is no exception. Ideal for Triode For Alternating Current (TRIAC) applications, this device offers a maximum on-state voltage of 1.8 V and a maximum RMS on-state current of 40 A. With a wide operating temperature range and low leakage current, the TPDV240 ensures optimal performance in various environments. Trust STMicroelectronics to provide innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

The low on-state voltage helps in reducing power losses and improving efficiency in the circuit.

Maximum DC Gate Trigger Current: 200 mA

A higher gate trigger current allows for reliable and fast switching of the TRIAC, ensuring smooth operation.

Maximum Leakage Current: 5 mA

The low leakage current minimizes power wastage and enhances the overall performance of the TRIAC.

Maximum Operating Temperature: 110 °C

With a high operating temperature range, this TRIAC can withstand varying environmental conditions, making it versatile for different applications.

Trigger Device Type: TRIAC

Being a TRIAC, this device is suitable for AC power control applications where high reliability and robustness are required.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures reliable operation even in cold environments, making it suitable for diverse applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and ensures a strong connection in the circuit.

Maximum RMS On-state Current: 40 A

The high on-state current rating allows for handling large AC loads, making this TRIAC suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low gate trigger voltage ensures efficient control and precise switching of the TRIAC, improving overall performance.

Repetitive Peak Off-state Voltage: 200 V

The high off-state voltage rating enables this TRIAC to handle high voltage applications with ease, ensuring reliable operation.

Minimum Critical Rate of Rise of Commutation Voltage: 0.00001 V/us

The low critical rate of rise of commutation voltage ensures smooth switching and minimal electromagnetic interference in the circuit.

Minimum Critical Rate of Rise of Off-state Voltage: 0.0002 V/us

The low critical rate of rise of off-state voltage helps in reducing voltage stress on the TRIAC, enhancing its longevity and reliability.

Technical Specifications

Triode For Alternating Current (TRIAC) TPDV240 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

.00001 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

.0002 V/us

Maximum DC Gate Trigger Current:

200 mA

Maximum DC Gate Trigger Voltage:

2.5 V

JESD-609 Code:

e0

Maximum Leakage Current:

5 mA

Maximum On-state Voltage:

1.8 V

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

40 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

Trade Compliance

TPDV240 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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