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TN1215-400G

STMicroelectronics

TN1215-400G by STMicroelectronics

TN1215-400G by STMicroelectronics is a single SCR in a compact rectangular package, ideal for surface mount applications. It features a max DC gate trigger current of 15 mA and can handle up to 12 A RMS on-state current. This device is perfect for power control in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,515 parts In-Stock

1+ parts

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3,515

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Anansix

USA . 1,835 parts In-Stock

1+ parts

-

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1k+ parts

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1,835

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Vyrian

USA . 1,022 parts In-Stock

1+ parts

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1,022

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,064 parts In-Stock

1+ parts

$1.898

100+ parts

-

1k+ parts

$1.708

10k+ parts

-

1,064

$1.898

-

$1.708

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MKK Technologies

India . 85 parts In-Stock

1+ parts

$3.569

100+ parts

-

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-

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85

$3.569

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DigiPath Technology Company

USA . 85 parts In-Stock

1+ parts

$3.569

100+ parts

-

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85

$3.569

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Corphita

USA . 4,432 parts In-Stock

1+ parts

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4,432

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Parana Technologies

USA . 450 parts In-Stock

1+ parts

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100+ parts

$2.269

1k+ parts

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450

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$2.269

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Overview

Elevate your electronic designs with the TN1215-400G from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality Silicon Controlled Rectifier (SCR) ensures reliable performance for power management applications, offering exceptional surge handling and efficiency. With its compact surface mount design, it's perfect for modern circuit boards, delivering unmatched value and reliability to engineers seeking robust solutions. Transform your projects with ST’s trusted technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures a lightweight and durable package, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Current: 15 mA

A low gate trigger current facilitates easier interfacing with control circuits, allowing for efficient operation and reduced energy consumption.

Configuration: SINGLE

Single configuration simplifies circuit design and minimizes space requirements while ensuring effective performance.

Surface Mount: YES

Being surface mount enables compact designs, allowing for a more efficient use of PCB space, which is ideal for modern electronic applications.

Package Shape: RECTANGULAR

The rectangular shape enhances proper alignment and connectivity on PCBs, ensuring reliable assembly and performance.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering capability and mechanical stability, improving the reliability of the connection.

Repetitive Peak Reverse Voltage: 200 V

A high repetitive peak reverse voltage allows this SCR to handle significant voltage spikes, making it suitable for robust applications.

No. of Terminals: 2

With just two terminals, the device is simple to integrate into standard circuitry, streamlining design and assembly.

Package Style (Meter): SMALL OUTLINE

The small outline design ensures that it can fit into compact spaces, making it ideal for space-constrained applications.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, it offers high efficiency and reliability for switching and rectification tasks in power electronics.

Terminal Position: SINGLE

A single terminal position simplifies installation and reduces the chances of misalignment during assembly.

Maximum RMS On-state Current: 12 A

A high maximum RMS on-state current rating allows this SCR to handle significant loads, making it suitable for high-power applications.

Repetitive Peak Off-state Voltage: 200 V

The ability to withstand 200 V in off-state conditions enhances reliability and durability in fluctuating electrical environments.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1215-400G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Maximum DC Gate Trigger Current:

15 mA

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN1215-400G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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