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TN1215-1000H

STMicroelectronics

TN1215-1000H by STMicroelectronics

TN1215-1000H by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-voltage applications. It supports a max repetitive peak reverse voltage of 1000 V and can handle up to 145 A non-repetitive peak on-state current. Operating b/w -40 °C to 125°C, it's perfect for robust power control solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,001 parts In-Stock

1+ parts

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2,001

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Anansix

USA . 1,365 parts In-Stock

1+ parts

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1,365

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Digiode

USA . 1,322 parts In-Stock

1+ parts

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1,322

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,942 parts In-Stock

1+ parts

$4.563

100+ parts

-

1k+ parts

$4.107

10k+ parts

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1,942

$4.563

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$4.107

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MKK Technologies

India . 2,161 parts In-Stock

1+ parts

$8.581

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2,161

$8.581

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DigiPath Technology Company

USA . 2,161 parts In-Stock

1+ parts

$8.581

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2,161

$8.581

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Corphita

USA . 3,126 parts In-Stock

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3,126

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Parana Technologies

USA . 2,356 parts In-Stock

1+ parts

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$5.456

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2,356

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$5.456

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Overview

Unlock unparalleled performance with the TN1215-1000H from STMicroelectronics, a leader in innovative semiconductor solutions. This reliable Silicon Controlled Rectifier (SCR) is designed for high-efficiency applications, delivering exceptional durability and robust operation even in extreme conditions. Perfect for power control and switching tasks, it ensures minimal leakage and maximum on-state current, providing outstanding value and trustworthiness that empower your projects to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the body material provides durability and resistance against environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 15 mA

A maximum gate trigger current of 15 mA ensures efficient operation without excessive power consumption, making it ideal for low-power applications.

Configuration: SINGLE

A single configuration simplifies circuit design and eases integration into various electronic systems.

Non Repetitive Peak On-state Current: 145 A

The high peak on-state current rating allows this SCR to handle significant load surges, making it suitable for demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space efficiency, fitting easily into standard PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are ideal for high-power applications.

Maximum On-state Current: 8 A

With an on-state current capacity of 8 A, this SCR can effectively control power in moderate-load applications.

Maximum Leakage Current: 2 mA

A low maximum leakage current of 2 mA minimizes energy loss and enhances the efficiency of the circuit.

Repetitive Peak Reverse Voltage: 1000 V

With a high reverse voltage rating, this SCR is well-suited for applications that experience high voltage transients.

No. of Terminals: 3

Three terminals provide flexibility in circuit design, allowing easy integration into various configurations.

Package Style (Meter): IN-LINE

The in-line packaging style offers ease of assembly and can streamline production processes.

Maximum Operating Temperature: 125 °C

The ability to operate at high temperatures enhances reliability in demanding environments.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, it offers efficient switching capabilities, making it ideal for controlled rectification in power applications.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures functionality in harsh, cold environments.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance, enhancing longevity.

Terminal Position: SINGLE

A single terminal position design simplifies PCB layout and reduces assembly complexity.

Maximum RMS On-state Current: 12 A

This SCR can handle up to 12 A in RMS current, making it a robust choice for continuous load applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage of 1.3 V indicates low power requirements for activation, improving overall circuit efficiency.

Case Connection: ANODE

Anode case connection simplifies connectivity in many common circuit designs, enhancing usability.

Repetitive Peak Off-state Voltage: 1000 V

This high off-state voltage rating prevents breakdowns in high voltage applications, ensuring operational safety.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

A high critical rate of rise of off-state voltage allows for fast switching capabilities in dynamic load conditions.

Maximum Holding Current: 40 mA

With a maximum holding current of 40 mA, this SCR ensures stable operation and efficient turn-off in low-current situations.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1215-1000H attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

145 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN1215-1000H Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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