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TN1215-1000B

STMicroelectronics

TN1215-1000B by STMicroelectronics

TN1215-1000B by STMicroelectronics is a single SCR in a rectangular surface mount package, ideal for high-voltage applications. It features a max repetitive peak reverse voltage of 1000 V and can handle up to 145 A non-repetitive peak on-state current. Operating b/w -40 °C to 125°C, it's perfect for robust electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,253 parts In-Stock

1+ parts

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3,253

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Anansix

USA . 2,772 parts In-Stock

1+ parts

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2,772

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Digiode

USA . 247 parts In-Stock

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247

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,597 parts In-Stock

1+ parts

$3.639

100+ parts

-

1k+ parts

$3.275

10k+ parts

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1,597

$3.639

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$3.275

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MKK Technologies

India . 2,060 parts In-Stock

1+ parts

$6.842

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2,060

$6.842

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DigiPath Technology Company

USA . 2,060 parts In-Stock

1+ parts

$6.842

100+ parts

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2,060

$6.842

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Corphita

USA . 1,755 parts In-Stock

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1,755

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Parana Technologies

USA . 1,093 parts In-Stock

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$4.350

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1,093

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$4.350

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Overview

Elevate your projects with the TN1215-1000B from STMicroelectronics, a leader in cutting-edge semiconductor solutions. Renowned for its reliability and efficiency, this Silicon Controlled Rectifier (SCR) is designed to handle demanding applications effortlessly. With robust performance and a compact surface mount design, it delivers exceptional value, ensuring your systems operate flawlessly under pressure. Experience the benefits of superior quality and innovation that only STMicroelectronics can offer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material provides excellent protection against environmental factors while maintaining structural integrity.

Maximum DC Gate Trigger Current: 15 mA

With a low gate trigger current, this SCR minimizes power consumption during operation, making it efficient for various applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces the footprint, making it suitable for compact electronic designs.

Non Repetitive Peak On-state Current: 145 A

This high non-repetitive peak on-state current allows the SCR to handle significant current surges, enhancing its robustness in dynamic applications.

Surface Mount: YES

The surface mount capability makes it easy to integrate into automated assembly processes and is ideal for modern PCB designs.

Package Shape: RECTANGULAR

The rectangular shape is efficient for space optimization on PCBs, facilitating better layout design.

Terminal Form: GULL WING

Gull wing terminals provide excellent solderability and mechanical stability, ensuring reliable connections in high-vibration environments.

Maximum On-state Current: 8 A

A decent on-state current rating ensures the SCR can effectively control power in medium-load applications.

Maximum Leakage Current: 2 mA

Low leakage current results in reduced power loss, enhancing overall efficiency and reliability of the circuit.

Repetitive Peak Reverse Voltage: 1000 V

A high reverse voltage rating ensures the SCR can withstand voltage spikes, providing greater protection in applications prone to surges.

No. of Terminals: 2

The simple two-terminal configuration makes it easy to incorporate into a range of designs, reducing complexity.

Package Style (Meter): SMALL OUTLINE

The small outline packaging allows for more compact designs, perfect for portable devices.

Maximum Operating Temperature: 125 °C

A high operating temperature rating increases reliability under thermal stress, making it suitable for harsh operating conditions.

Trigger Device Type: SCR

Being an SCR means it can efficiently switch high power loads, ideal for applications such as motor control and lighting.

Minimum Operating Temperature: -40 °C

The ability to function at low temperatures ensures reliability in cold environments, expanding its application range.

Terminal Finish: Matte Tin (Sn)

The matte tin finish enhances solderability, ensuring strong connections during assembly and in service.

Terminal Position: SINGLE

Single terminal positioning simplifies layout, making the product easier to integrate into compact circuits.

Maximum RMS On-state Current: 12 A

This rating ensures the SCR can continuously handle significant current levels during regular operation, enhancing its versatility.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage requirement simplifies the driving circuitry, resulting in lower overall design complexity.

Case Connection: ANODE

The anode connection is straightforward, making it compatible with a wide range of applications in power electronics.

Repetitive Peak Off-state Voltage: 1000 V

This high off-state voltage allows the SCR to operate safely in high voltage applications, ensuring reliability under stress.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/μs

A high critical rate of rise enhances the SCR's stability and performance in fast-switching applications.

Maximum Holding Current: 40 mA

Low holding current allows the SCR to latch on efficiently at lower current levels, making it well-suited for control applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1215-1000B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

145 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN1215-1000B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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