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TN1215-800B

STMicroelectronics

TN1215-800B by STMicroelectronics

TN1215-800B by STMicroelectronics is a single SCR in a small outline package, ideal for power control applications. It features a max on-state current of 8 A, non-repetitive peak on-state current of 115 A, and operates b/w -40 °C to 125°C. With an impressive repetitive peak reverse voltage of 800 V, it ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,606 parts In-Stock

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6,606

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Digiode

USA . 3,494 parts In-Stock

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3,494

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Anansix

USA . 1,354 parts In-Stock

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1,354

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,279 parts In-Stock

1+ parts

$4.454

100+ parts

-

1k+ parts

$4.008

10k+ parts

-

2,279

$4.454

-

$4.008

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$4.973

100+ parts

$4.525

1k+ parts

$4.078

10k+ parts

-

150

$4.973

$4.525

$4.078

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MKK Technologies

India . 918 parts In-Stock

1+ parts

$8.375

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918

$8.375

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DigiPath Technology Company

USA . 918 parts In-Stock

1+ parts

$8.375

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918

$8.375

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AZTECH Wire

Italy . 240 parts In-Stock

1+ parts

$12.160

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240

$12.160

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RC Electronics

USA . 34,260 parts In-Stock

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34,260

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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QUARKTWIN TECHNOLOGY LTD

USA . 14,908 parts In-Stock

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14,908

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Parana Technologies

USA . 2,354 parts In-Stock

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$5.325

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2,354

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$5.325

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Corphita

USA . 1,529 parts In-Stock

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1,529

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Overview

Experience superior performance with the TN1215-800B from STMicroelectronics, a leader in advanced semiconductor solutions. This high-quality Silicon Controlled Rectifier (SCR) ensures reliability and efficiency for various applications, from power management to motor control. With its robust design and excellent thermal stability, it delivers consistent results even under demanding conditions. Trust STMicroelectronics for innovative technology that empowers your projects and enhances your operational capabilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent protection against environmental factors, ensuring reliability and durability.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current requirements lead to lower power consumption, making the device efficient.

Configuration: SINGLE

Simplicity in design with a single configuration makes integration into circuits easier and more cost-effective.

Non Repetitive Peak On-state Current: 115 A

High peak current handling capability allows the SCR to manage large surges, making it suitable for demanding applications.

Surface Mount: YES

Surface mount technology allows for compact designs and easier automated assembly, enhancing production efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package optimizes space on PCBs, facilitating a compact circuit design.

Terminal Form: GULL WING

Gull wing terminals ensure solid solder joints and improved reliability during assembly and operation.

Maximum On-state Current: 8 A

This current capability is suitable for various applications, allowing reliable performance in many circuits.

Maximum Leakage Current: 2 mA

Low leakage current is essential for energy-efficient designs, contributing to the overall efficiency of the system.

Repetitive Peak Reverse Voltage: 800 V

The capability to withstand high reverse voltage enhances robustness, making it suitable for high-voltage applications.

No. of Terminals: 2

A simple two-terminal design simplifies integration and minimizes space on the circuit board.

Package Style (Meter): SMALL OUTLINE

The small outline package contributes to space-saving designs, which is crucial in modern electronics.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows the SCR to function in demanding thermal environments without compromising performance.

Trigger Device Type: SCR

SCRs are reliable for controlling high power, making this product ideal for applications in motor control and power supplies.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures reliable performance in extreme environments.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and protects against corrosion, enhancing longevity.

Terminal Position: SINGLE

Single terminal positioning simplifies the PCB layout and reduces design complexity.

Maximum RMS On-state Current: 12 A

High RMS on-state current rating supports efficient operation in high-load conditions.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage improves energy efficiency and minimizes energy loss during operation.

Case Connection: ANODE

Anode connection ensures compatibility with standard SCR configurations, simplifying design integration.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating guarantees safe operation under voltage spikes and fluctuations.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/μs

This feature allows the SCR to handle voltage rise efficiently, preventing unwanted triggering and improving reliability.

Maximum Holding Current: 40 mA

Applicable in circuits requiring low holding current, making it versatile for a range of applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1215-800B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

115 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN1215-800B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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