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TN1215-1000G-TR

STMicroelectronics

TN1215-1000G-TR by STMicroelectronics

TN1215-1000G-TR by STMicroelectronics is a single SCR in a small outline package, ideal for high-voltage applications. It features a max repetitive peak reverse voltage of 1000 V, non-repetitive peak on-state current of 146 A, and operates b/w -40 °C to 125°C. This device is perfect for power control and switching in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,919 parts In-Stock

1+ parts

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3,919

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Vyrian

USA . 2,440 parts In-Stock

1+ parts

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1k+ parts

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2,440

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Anansix

USA . 1,692 parts In-Stock

1+ parts

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1,692

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,849 parts In-Stock

1+ parts

$2.355

100+ parts

-

1k+ parts

$2.120

10k+ parts

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1,849

$2.355

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$2.120

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MKK Technologies

India . 138 parts In-Stock

1+ parts

$4.429

100+ parts

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138

$4.429

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DigiPath Technology Company

USA . 138 parts In-Stock

1+ parts

$4.429

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138

$4.429

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Corphita

USA . 4,568 parts In-Stock

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4,568

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Parana Technologies

USA . 15 parts In-Stock

1+ parts

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100+ parts

$2.816

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15

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$2.816

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Overview

Unlock superior performance with the TN1215-1000G-TR from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality Silicon Controlled Rectifier (SCR) offers exceptional reliability and efficiency for various applications, including power control and switching systems. With sturdy construction and minimal leakage, it delivers optimal performance even under demanding conditions. Experience the advantages of precision engineering and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 15 mA

A low maximum gate trigger current helps in reducing power consumption, making it efficient in applications requiring minimal power.

Configuration: SINGLE

The single configuration simplifies design and integration into circuits, providing a straightforward solution for controlling power.

Non Repetitive Peak On-state Current: 146 A

This high peak on-state current capability allows the SCR to handle significant load currents, making it ideal for high-power applications.

Surface Mount: YES

Surface mount capability allows for compact designs and efficient use of space on PCBs, which is advantageous for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used in various applications, ensuring compatibility with existing designs.

Terminal Form: GULL WING

Gull wing terminals provide stable mechanical support and ease of soldering in automated assembly processes.

Maximum On-state Current: 8 A

With a maximum on-state current of 8 A, this SCR can efficiently handle moderate loads, ideal for domestic and industrial applications.

Maximum Leakage Current: 2 mA

A low maximum leakage current enhances energy efficiency and reliability, reducing the risk of power loss in standby applications.

Repetitive Peak Reverse Voltage: 1000 V

A repetitive peak reverse voltage of 1000 V allows the SCR to operate effectively in high-voltage environments.

No. of Terminals: 2

Having only two terminals simplifies circuit design and integration, making it user-friendly for engineering applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to space-saving designs, which is essential in compact electronic devices.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliability in applications exposed to varying thermal environments.

Trigger Device Type: SCR

As an SCR, this product is optimal for controlling large amounts of power, making it suitable for motor controls and lighting applications.

Minimum Operating Temperature: -40 °C

The ability to operate in low temperatures expands application areas, especially in harsh environmental conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish improves solderability and reduces oxidation, enhancing the reliability of electrical connections.

Terminal Position: SINGLE

Having a single terminal position streamlines the design and ensures straightforward connectivity within circuits.

Maximum RMS On-state Current: 12 A

This capability provides versatility in applications requiring sustained current handling, adding to its overall effectiveness.

Maximum DC Gate Trigger Voltage: 1.3 V

A low maximum gate trigger voltage promotes efficient performance, reducing the energy needed to trigger the device.

Case Connection: ANODE

The anode case connection facilitates integration into circuits while ensuring appropriate current flow direction.

Repetitive Peak Off-state Voltage: 1000 V

This high off-state voltage rating guarantees that the SCR can withstand high voltage surges, ensuring reliability in sensitive applications.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

A minimum critical rate of rise enhances the SCR's ability to handle transient voltages, making it effective for power supply management.

Maximum Holding Current: 30 mA

The maximum holding current allows for precise control over the SCR's operation, making it suitable for delicate applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1215-1000G-TR attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

30 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

146 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN1215-1000G-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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