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TN1215-600G

STMicroelectronics

TN1215-600G by STMicroelectronics

TN1215-600G by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for power control applications. It features a max repetitive peak voltage of 600V, on-state current of 12A, and operates b/w -40 °C to 125°C. Its gull-wing terminals ensure easy surface mounting.

Median Price

$0.665

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4,429 parts In-Stock

1+ parts

$1.545

100+ parts

$0.667

1k+ parts

$0.473

10k+ parts

$0.392

4,429

$1.545

$0.667

$0.473

$0.392

Avnet

USA . 10,000 parts In-Stock

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-

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10,000

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Verical

USA . 4,410 parts In-Stock

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-

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$0.665

1k+ parts

$0.471

10k+ parts

$0.390

4,410

-

$0.665

$0.471

$0.390

Chip1Stop

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

$0.466

1k+ parts

$0.329

10k+ parts

-

500

-

$0.466

$0.329

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Distributors (In-Stock)

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Digiode

USA . 3,920 parts In-Stock

1+ parts

$0.922

100+ parts

-

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3,920

$0.922

-

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TME

Poland . 243 parts In-Stock

1+ parts

$1.690

100+ parts

$0.729

1k+ parts

$0.523

10k+ parts

$0.517

243

$1.690

$0.729

$0.523

$0.517

Vyrian

USA . 8,299 parts In-Stock

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-

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8,299

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Anansix

USA . 1,780 parts In-Stock

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1,780

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ComSIT USA

USA . 750 parts In-Stock

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750

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Mil-Aero Solutions, Inc.

USA . 460 parts In-Stock

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460

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ComSIT Distribution GmbH

Germany . 350 parts In-Stock

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350

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EMSNET

USA . 170 parts In-Stock

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170

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Corel Iberica Componentes, S.L.

Spain . 168 parts In-Stock

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168

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North Shore Components

USA . 55 parts In-Stock

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55

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Bristol Electronics

USA . 50 parts In-Stock

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50

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Atlantic Semiconductor

USA . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 4,243 parts In-Stock

1+ parts

$0.873

100+ parts

-

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4,243

$0.873

-

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IDEA Electronic Components Group

UK . 286 parts In-Stock

1+ parts

$3.605

100+ parts

-

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$3.245

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286

$3.605

-

$3.245

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MKK Technologies

India . 281 parts In-Stock

1+ parts

$6.780

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281

$6.780

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DigiPath Technology Company

USA . 281 parts In-Stock

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$6.780

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281

$6.780

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Microchip USA

USA . 3,564 parts In-Stock

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$12.675

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3,564

$12.675

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AZTECH Wire

Italy . 1,041 parts In-Stock

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$13.920

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1,041

$13.920

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QUARKTWIN TECHNOLOGY LTD

USA . 27,372 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Authorized Procurement Solutions

USA . 2,950 parts In-Stock

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Parana Technologies

USA . 2,360 parts In-Stock

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$4.311

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$4.311

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Perfect Parts

USA . 1,088 parts In-Stock

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1,088

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FE SAS

France . 400 parts In-Stock

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400

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iodParts Technologies Inc.

India . 350 parts In-Stock

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350

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Assy Fe

Spain . 213 parts In-Stock

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213

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Overview

Elevate your projects with the TN1215-600G from STMicroelectronics, a leader in innovative semiconductor solutions. This highly reliable Silicon Controlled Rectifier (SCR) delivers superior performance for diverse applications, from power management to motor control. Its compact design and robust construction ensure optimal efficiency, making it perfect for both industrial and consumer electronics. Trust in STMicroelectronics' commitment to quality and unlock unparalleled benefits for your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body ensures reliable performance and protection against environmental factors.

Maximum DC Gate Trigger Current: 0.2 mA

A low trigger current requirement allows for efficient operation and reduces power consumption.

Configuration: SINGLE

Single configuration simplifies integration into circuits, making it a versatile choice for various applications.

Non Repetitive Peak On-state Current: 146 A

High non-repetitive peak on-state current capacity allows the device to handle significant surge currents, enhancing reliability.

Surface Mount: YES

Surface mount design enables space-saving installations and facilitates automated assembly processes.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient space utilization on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering properties and mechanical stability on the PCB.

Maximum On-state Current: 12 A

With a maximum on-state current of 12 A, this SCR is suitable for medium power applications.

Maximum Leakage Current: 0.005 mA

Very low leakage current enhances efficiency and minimizes power loss in the circuit.

Repetitive Peak Reverse Voltage: 600 V

A high reverse voltage rating ensures reliable performance in high voltage applications.

Maximum Repetitive Peak Off-state Leakage Current: 5 uA

Extremely low leakage current in off-state ensures reduced energy loss and enhanced efficiency.

No. of Terminals: 2

The two-terminal design simplifies connections and reduces potential points of failure.

Package Style (Meter): SMALL OUTLINE

Small outline package style is ideal for compact designs and helps save board space.

Maximum Operating Temperature: 125 °C

A high operating temperature rating allows the device to function effectively in harsh environments.

Trigger Device Type: SCR

As a silicon-controlled rectifier, this product offers reliable switching and control in various applications.

Minimum Operating Temperature: -40 °C

A wide temperature range allows the SCR to be used in diverse environmental conditions.

Terminal Finish: Matte Tin (Sn) - annealed

The matt tin finish improves solderability and enhances the device's durability.

Terminal Position: SINGLE

Single terminal position promotes straightforward circuit integration.

Maximum RMS On-state Current: 12 A

Capability of handling 12 A RMS current qualifies it for various power control applications.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage provides ease of drive and enhances the device's efficiency.

Case Connection: ANODE

Anode case connection enables straightforward circuit topologies.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage capability ensures optimal performance in demanding applications.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/µs

A high critical rate of rise in off-state voltage ensures reliable operation and prevents unwanted triggering.

Maximum Holding Current: 30 mA

A higher holding current guarantees more stable operation and better performance under varying load conditions.

Maximum Time At Peak Reflow Temperature: 30 s

Extended peak reflow time facilitates more effective soldering during assembly, ensuring robust connections.

Peak Reflow Temperature: 245 °C

The high peak reflow temperature accommodates advanced soldering techniques, ensuring compatibility with modern manufacturing processes.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1215-600G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

30 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

.005 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

146 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

12 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Maximum Repetitive Peak Off-state Leakage Current:

5 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

SCR

Trade Compliance

TN1215-600G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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