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TN1205H-6G

STMicroelectronics

TN1205H-6G by STMicroelectronics

TN1205H-6G by STMicroelectronics is a SCR with 126A peak on-state current, 12A max on-state current, and 5mA DC gate trigger current. It's used in applications requiring high power switching such as industrial motor controls and lighting systems due to its 600V repetitive peak reverse voltage.

Median Price

$0.508

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.518

10k+ parts

$0.462

2,000

-

-

$0.518

$0.462

Rochester

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.499

1k+ parts

$0.414

10k+ parts

$0.370

2,000

-

$0.499

$0.414

$0.370

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,958 parts In-Stock

1+ parts

-

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3,958

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Vyrian

USA . 3,000 parts In-Stock

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3,000

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Chip Stock

USA . 855 parts In-Stock

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855

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Sensible Micro Corp

USA . 764 parts In-Stock

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764

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Anansix

USA . 540 parts In-Stock

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540

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,906 parts In-Stock

1+ parts

$4.016

100+ parts

-

1k+ parts

$3.614

10k+ parts

-

1,906

$4.016

-

$3.614

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Component Stockers USA

USA . 16,098 parts In-Stock

1+ parts

$4.830

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16,098

$4.830

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MKK Technologies

India . 2,171 parts In-Stock

1+ parts

$7.551

100+ parts

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2,171

$7.551

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DigiPath Technology Company

USA . 2,171 parts In-Stock

1+ parts

$7.551

100+ parts

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2,171

$7.551

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AZTECH Wire

Italy . 98 parts In-Stock

1+ parts

$17.820

100+ parts

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98

$17.820

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A-Z Elektronik GmbH

Germany . 5,219 parts In-Stock

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5,219

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Corphita

USA . 1,178 parts In-Stock

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1,178

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Parana Technologies

USA . 803 parts In-Stock

1+ parts

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100+ parts

$4.802

1k+ parts

-

10k+ parts

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803

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$4.802

-

-

Overview

Unlock the power of high-quality electronics with the TN1205H-6G from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-notch Silicon Controlled Rectifiers that offer unmatched performance and reliability. Ideal for a wide range of applications, this SCR is designed to provide customers with superior value, benefits, and advantages. Experience the difference with STMicroelectronics and take your projects to the next level with the TN1205H-6G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the SCR durable and resistant to external elements, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 5 mA

The low gate trigger current requirement allows for efficient and precise control over the SCR, enhancing its performance.

Configuration: SINGLE

The single configuration simplifies the installation and operation of the SCR, making it user-friendly.

Repetitive Peak On-state Current: 126 A

With a high repetitive peak on-state current, this SCR can handle heavy loads and power requirements effectively.

Surface Mount: YES

Being surface mountable makes the SCR easy to integrate into circuit boards, saving space and simplifying the overall design.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and secure mounting of the SCR in various electronic devices.

Maximum On-state Current: 12 A

The high maximum on-state current rating ensures the SCR can handle high current loads without any issues, making it reliable.

Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage rating ensures the SCR can withstand voltage spikes and surges in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1205H-6G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

65 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

20 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

3 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

126 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

12 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

245

Maximum RMS On-state Current:

7.6 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

SCR

Trade Compliance

TN1205H-6G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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