Loading...

TN1215-1000B-TR

STMicroelectronics

TN1215-1000B-TR by STMicroelectronics

TN1215-1000B-TR from STMicroelectronics is a single SCR in a rectangular surface mount package, ideal for high-voltage applications. It supports a max repetitive peak reverse voltage of 1000 V and non-repetitive peak on-state current of 145 A. Operating b/w -40 °C to 125°C, it’s perfect for power control circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,802 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,802

-

-

-

-

Digiode

USA . 539 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

539

-

-

-

-

Anansix

USA . 480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

480

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 928 parts In-Stock

1+ parts

$3.928

100+ parts

-

1k+ parts

$3.536

10k+ parts

-

928

$3.928

-

$3.536

-

MKK Technologies

India . 2,067 parts In-Stock

1+ parts

$7.387

100+ parts

-

1k+ parts

-

10k+ parts

-

2,067

$7.387

-

-

-

DigiPath Technology Company

USA . 2,067 parts In-Stock

1+ parts

$7.387

100+ parts

-

1k+ parts

-

10k+ parts

-

2,067

$7.387

-

-

-

Corphita

USA . 1,929 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,929

-

-

-

-

Parana Technologies

USA . 839 parts In-Stock

1+ parts

-

100+ parts

$4.697

1k+ parts

-

10k+ parts

-

839

-

$4.697

-

-

Overview

Unlock the power of reliable performance with the TN1215-1000B-TR from STMicroelectronics. Renowned for excellence and innovation, STMicroelectronics delivers this robust Silicon Controlled Rectifier designed for demanding applications in industrial automation, power management, and renewable energy systems. Its compact design and superior thermal stability ensure optimal efficiency, while minimizing downtime. Choose the TN1215-1000B-TR for unmatched quality and peace of mind in your next project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection against environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 15 mA

A low gate trigger current requirement enhances compatibility with low-power driving circuits, reducing overall power consumption.

Configuration: SINGLE

A single configuration allows for easier integration into circuits where space is limited while ensuring functional efficiency.

Non Repetitive Peak On-state Current: 145 A

High peak on-state current capability provides robust performance in demanding applications, allowing the SCR to handle surge conditions effectively.

Surface Mount: YES

Surface mount technology facilitates compact designs and efficient manufacturing processes, ideal for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape promotes efficient use of PCB space and simplifies design aspects in various electronic applications.

Terminal Form: GULL WING

Gull wing terminals offer excellent solder joint reliability, contributing to the overall performance and longevity of the component.

Maximum On-state Current: 8 A

With an 8 A capability, the SCR is suitable for medium-current applications without overheating, ensuring operational reliability.

Maximum Leakage Current: 2 mA

Low leakage current minimizes power loss and enhances the efficiency of applications, particularly in energy-sensitive designs.

Repetitive Peak Reverse Voltage: 1000 V

High reverse voltage rating allows the SCR to be used in high-voltage applications, providing versatility across various sectors.

No. of Terminals: 2

A simple two-terminal design simplifies connections and reduces potential points of failure in circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports space-constrained designs, making it an excellent choice for compact electronics.

Maximum Operating Temperature: 125 °C

A high operating temperature rating ensures reliable performance in demanding environments, suitable for various industrial applications.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, this device is designed for efficient control of power in various applications, enhancing performance.

Minimum Operating Temperature: -40 °C

Operating in extremely low temperatures expands the usability of this SCR in harsh environments and cold climates.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides good solderability and corrosion resistance, improving the reliability of connections.

Terminal Position: SINGLE

Single terminal positioning simplifies PCB layout and contributes to a more efficient assembly process.

Maximum RMS On-state Current: 12 A

A maximum RMS on-state current of 12 A ensures stability and performance in continuous operation modes for various applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage enhances the efficiency of gate drive circuits, allowing for less power loss in control systems.

Case Connection: ANODE

The anode case connection optimizes the electrical characteristics, allowing for better performance in power control applications.

Repetitive Peak Off-state Voltage: 1000 V

High off-state voltage capability makes this SCR ideal for applications where voltage surges are common, ensuring reliable operation.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

A high critical rate of rise enables the SCR to handle fast transients effectively, ensuring robustness in dynamic applications.

Maximum Holding Current: 40 mA

A maximum holding current of 40 mA allows the SCR to maintain conduction at low power levels, enhancing design flexibility.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1215-1000B-TR attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

145 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN1215-1000B-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19