Loading...

STG3P3M25N120

STMicroelectronics

STG3P3M25N120 by STMicroelectronics

STG3P3M25N120 by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.75V, supports up to 1200V collector-emitter voltage, and dissipates up to 104W. Ideal for high-performance energy management systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,487 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,487

-

-

-

-

Anansix

USA . 2,334 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,334

-

-

-

-

Vyrian

USA . 1,203 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,203

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,866 parts In-Stock

1+ parts

$1.559

100+ parts

-

1k+ parts

$1.403

10k+ parts

-

1,866

$1.559

-

$1.403

-

MKK Technologies

India . 1,996 parts In-Stock

1+ parts

$2.932

100+ parts

-

1k+ parts

-

10k+ parts

-

1,996

$2.932

-

-

-

DigiPath Technology Company

USA . 1,996 parts In-Stock

1+ parts

$2.932

100+ parts

-

1k+ parts

-

10k+ parts

-

1,996

$2.932

-

-

-

Corphita

USA . 3,776 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,776

-

-

-

-

Parana Technologies

USA . 1,989 parts In-Stock

1+ parts

-

100+ parts

$1.864

1k+ parts

-

10k+ parts

-

1,989

-

$1.864

-

-

Overview

Unlock powerful performance with the STG3P3M25N120 from STMicroelectronics—a leader in innovative semiconductor solutions. This N-Channel IGBT delivers exceptional power control and efficiency, making it ideal for high-demand applications like renewable energy systems and industrial drives. With robust thermal management and a compact design, it enables reliable operation under challenging conditions, ensuring your projects thrive while reducing energy costs. Trust in STMicroelectronics for quality that drives success!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically offer better performance characteristics, including lower on-resistance and faster switching speeds, making them suitable for high-efficiency applications.

Configuration: COMPLEX

The complex configuration allows for advanced control strategies and better overall performance in power management applications.

Transistor Application: POWER CONTROL

Designed specifically for power control, this IGBT can efficiently manage high voltages and currents, ideal for industrial and automotive applications.

Maximum VCEsat: 2.75 V

A low VCEsat value ensures that the IGBT operates efficiently with less power loss, improving the overall energy efficiency of the system.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient thermal management and makes it easier to integrate into various circuit designs.

No. of Elements: 6

Having six elements allows for increased current handling capabilities and better thermal performance, enhancing reliability under heavy load conditions.

No. of Terminals: 13

The 13 terminals provide flexibility in circuit design and allow for enhanced connectivity options in various applications.

Maximum Power Dissipation (Abs): 104 W

A high maximum power dissipation rating ensures reliable operation under high load conditions without overheating, extending the lifespan of the component.

Package Style (Meter): FLANGE MOUNT

Flange mount style facilitates secure mounting and efficient heat dissipation, which is critical for high-power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this IGBT can function reliably in demanding environments, providing greater design flexibility.

Maximum Collector-Emitter Voltage: 1200 V

A maximum collector-emitter voltage of 1200 V allows for safe operation in high-voltage applications, enhancing its versatility in different circuits.

Transistor Element Material: SILICON

Silicon is widely used for its excellent electrical properties and thermal stability, making this IGBT a robust choice for various applications.

Maximum Gate-Emitter Voltage: 20 V

A maximum gate-emitter voltage of 20 V offers flexibility in gate drive designs while ensuring reliable operation.

Maximum Collector Current (IC): 50 A

The ability to handle a maximum collector current of 50 A makes this IGBT suitable for high-power applications in industrial and automotive systems.

Terminal Position: UPPER

The upper terminal position allows for simpler circuit layout and better access for connections, improving assembly efficiency.

Case Connection: ISOLATED

An isolated case connection helps prevent electrical interference, increasing the safety and reliability of the device in sensitive applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STG3P3M25N120 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X13

No. of Elements:

6

No. of Terminals:

13

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.75 V

Trade Compliance

STG3P3M25N120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6