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STG3699QTR

STMicroelectronics

STG3699QTR by STMicroelectronics

STG3699QTR by STMicroelectronics is a versatile CMOS multiplexer with 4 functions, operating b/w 1.65V and 4.3V. It features a max on-state resistance of 0.5Ω and operates in extreme temps from -55 °C to 125 °C, ideal for military applications. Its compact design ensures efficient space utilization in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,103 parts In-Stock

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Digiode

USA . 4,817 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 3,935 parts In-Stock

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Anansix

USA . 1,640 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,090 parts In-Stock

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Distributors (Availability)

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Microchip USA

USA . 492 parts In-Stock

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$9.697

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492

$9.697

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AZTECH Wire

Italy . 87 parts In-Stock

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$18.710

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87

$18.710

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IDEA Electronic Components Group

UK . 390 parts In-Stock

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$21.796

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$19.616

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MKK Technologies

India . 76 parts In-Stock

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$40.985

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DigiPath Technology Company

USA . 76 parts In-Stock

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$40.985

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,218 parts In-Stock

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Kepictronics

USA . 5,780 parts In-Stock

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Corphita

USA . 4,814 parts In-Stock

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GreenTree Electronics

Israel . 1,208 parts In-Stock

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Parana Technologies

USA . 1,024 parts In-Stock

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$26.060

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Perfect Parts

USA . 121 parts In-Stock

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Overview

Elevate your designs with the STG3699QTR from STMicroelectronics, a premier choice in multiplexers and switches. Renowned for its commitment to quality and innovation, STMicroelectronics ensures this compact, high-performance component enhances efficiency and reliability across diverse applications—from consumer electronics to industrial systems. Enjoy seamless switching with low resistance and fast response times, maximizing your project's potential while minimizing power consumption.

Feature Benefit Bullets

Surface Mount: YES

The surface mount capability allows for easier integration into compact designs, making it ideal for space-constrained applications.

No. of Functions: 4

With 4 functions, this device offers versatility for a range of applications, enabling multiple signal paths in a single component.

Package Shape: SQUARE

The square package shape is optimal for maximizing board space and improving layout efficiency in circuit designs.

Nominal Supply Voltage (Vsup): 2.7 V

The nominal supply voltage of 2.7V provides a balance between performance and power consumption, suitable for many low-power applications.

Power Supplies (V): 1.8/3.3

Supporting both 1.8V and 3.3V supply voltages allows for compatibility with a wide range of logic levels and systems.

No. of Terminals: 16

Having 16 terminals facilitates complex connectivity while maintaining a compact size, making it versatile for various circuit configurations.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The very thin profile and heat sink qualities enhance thermal management, ensuring reliability under high-performance conditions.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliability in demanding environments, typical of military and industrial applications.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, this product is suitable for extreme environments, such as aerospace and defense.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and provides long-term reliability, reducing the chance of corrosion.

Terminal Position: QUAD

The quad terminal positioning contributes to efficient routing and compact board design, which is essential for modern applications.

Output (V): SEPARATE OUTPUT

Separate output capability enables more flexible circuit designs, allowing for independent control of different functions.

Maximum Seated Height: 1 mm

A maximum seated height of just 1 mm contributes to designs with minimal height requirements, perfect for ultra-compact electronics.

Width: 3 mm

The compact 3 mm width enables dense circuit layouts, maintaining functionality without sacrificing space.

Other IC type: SPDT

As a Single Pole Double Throw (SPDT) switch, it provides versatile signal routing capabilities for complex applications.

Minimum Supply Voltage (Vsup): 1.65 V

A low minimum supply voltage of 1.65V allows integration into low-power systems, improving energy efficiency.

Maximum Time At Peak Reflow Temperature (s): 30

The capability to withstand 30 seconds at peak reflow temperature ensures compatibility with modern soldering processes.

Peak Reflow Temperature (°C): 260

With a peak reflow temperature of 260 °C, it ensures robust solder joints during manufacturing, enhancing device longevity.

Maximum On-state Resistance (Ron): 0.5 ohm

The low on-state resistance minimizes power loss during operation, leading to better overall energy efficiency in circuits.

Maximum Switch-on Time: 50 ns

A rapid switch-on time of 50 ns allows for high-speed operation, suitable for dynamic signal routing applications.

Length: 3 mm

The compact length of 3 mm allows high-density placement on circuit boards, promoting efficient use of space.

Maximum Switch-off Time: 30 ns

With a quick switch-off time of 30 ns, this device supports fast signal integrity, which is crucial in high-speed communication.

Temperature Grade: MILITARY

Military grade assures that the device meets strict performance and reliability standards, making it suitable for critical applications.

Technology: CMOS

The CMOS technology ensures low power consumption and high density, making it perfect for modern low-power designs.

Terminal Form: NO LEAD

No-lead terminals allow for a smaller footprint, improving design layout and enhancing thermal performance.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch optimizes space on the PCB, allowing for more components to be placed in a smaller area.

Maximum Supply Voltage (Vsup): 4.3 V

The maximum supply voltage of 4.3V provides flexibility for higher power applications while maintaining operational stability.

Normal Position (V): NO/NC

The normally open/normally closed functionality provides versatile control options for various application needs.

Nominal Off-state Isolation: 64 dB

A nominal off-state isolation of 64 dB ensures high signal integrity by reducing crosstalk, enhancing overall circuit performance.

Switching (V): BREAK-BEFORE-MAKE

The break-before-make switching ensures no short circuits occur during operation, providing safe and reliable performance.

Nominal On-state Resistance Match: 0.06 ohm

The very low nominal on-state resistance match enables efficient signal paths, minimizing heat generation and energy loss.

Technical Specifications

Multiplexers & Switches STG3699QTR attributes and parameters. Explore more Multiplexers & Switches devices from STMicroelectronics

Specs

Additional Features:

2-CHANNEL MUX/DEMUX

Other IC type:

JESD-30 Code:

S-XQCC-N16

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

Normal Position (V):

NO/NC

No. of Channels:

1

No. of Functions:

4

No. of Terminals:

16

Nominal Off-state Isolation:

64 dB

Nominal On-state Resistance Match:

.06 ohm

Maximum On-state Resistance (Ron):

.5 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

4.3 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Maximum Switch-off Time:

30 ns

Maximum Switch-on Time:

50 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3 mm

Trade Compliance

STG3699QTR Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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