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STG3684ADTR

STMicroelectronics

STG3684ADTR by STMicroelectronics

STG3684ADTR by STMicroelectronics is a CMOS SPDT switch with a max on-state resistance of 0.7Ω and operates b/w 1.65V to 4.3V. It features dual functions in a compact, thin profile package, ideal for military applications requiring high reliability. With an operating temp range of -55 °C to 125 °C, it ensures robust performance in extreme conditions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,444 parts In-Stock

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5,444

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Digiode

USA . 3,514 parts In-Stock

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3,514

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Anansix

USA . 1,728 parts In-Stock

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1,728

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LIBRA Elektronik GmbH

Germany . 930 parts In-Stock

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930

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Distributors (Availability)

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Microchip USA

USA . 254 parts In-Stock

1+ parts

$2.357

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-

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254

$2.357

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AZTECH Wire

Italy . 377 parts In-Stock

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$13.510

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377

$13.510

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IDEA Electronic Components Group

UK . 961 parts In-Stock

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$21.266

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$19.139

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961

$21.266

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$19.139

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MKK Technologies

India . 1,468 parts In-Stock

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$39.989

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1,468

$39.989

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DigiPath Technology Company

USA . 1,468 parts In-Stock

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$39.989

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$39.989

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Kepictronics

USA . 83,070 parts In-Stock

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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Assy Fe

Spain . 4,585 parts In-Stock

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Corphita

USA . 2,456 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,778 parts In-Stock

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1,778

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Parana Technologies

USA . 1,039 parts In-Stock

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$25.426

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1,039

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$25.426

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Overview

Unlock unparalleled performance with the STG3684ADTR from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This advanced multiplexer switch delivers exceptional reliability and efficiency for a range of applications, from automotive to industrial automation. Its compact design and low power consumption make it perfect for modern devices, ensuring seamless operation even in extreme conditions. Elevate your projects with this high-quality component that promises unmatched value and performance!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easier integration into compact electronic devices, enhancing versatility and minimizing board space requirements.

No. of Functions: 2

Having two functions offers flexibility for a range of applications, making it suitable for multi-channel signal routing.

Package Shape: RECTANGULAR

The rectangular package shape provides a reliable footprint for placement on PCBs, promoting efficient use of space.

Nominal Supply Voltage (Vsup): 2.3 V

With a nominal supply voltage of 2.3 V, this product is energy-efficient, ideal for battery-powered applications.

Power Supplies (V): 1.8/3.3

Compatible with multiple supply voltages (1.8V and 3.3V), this device provides versatility for different circuit requirements.

No. of Terminals: 10

Having 10 terminals allows for extensive connectivity options, facilitating complex circuit designs.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline and thin profile enable it to be used in space-constrained environments, making it ideal for portable devices.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliability in demanding environments, such as automotive applications.

Minimum Operating Temperature: -55 °C

The ability to operate at low temperatures (as low as -55 °C) extends the range of applications, especially in harsh environments.

Terminal Finish: Nickel/Palladium (Ni/Pd)

The nickel/palladium finish offers excellent corrosion resistance and solderability, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal position enhances design flexibility and allows for optimal PCB layout designs.

Output (V): SEPARATE OUTPUT

Separate outputs facilitate effective signal management, ideal for systems requiring distinct channel operations.

Maximum Seated Height: 0.6 mm

A low seated height minimizes the profile of the assembly, accommodating designs where space is at a premium.

Width: 2 mm

A compact width of 2 mm helps designers save space on PCB layouts, promoting more efficient designs.

Other IC type: SPDT

As a single-pole double-throw device, it supports versatile switching capabilities, useful in various applications.

Minimum Supply Voltage (Vsup): 1.65 V

The ability to operate at minimum voltage as low as 1.65 V enhances compatibility with low-power systems.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum reflow exposure of 30 seconds ensures minimal stress on the components during soldering processes.

Peak Reflow Temperature: 260 °C

The high peak reflow temperature tolerance allows it to withstand standard assembly processes without reliability concerns.

Maximum On-state Resistance (Ron): 0.7 ohm

A low on-state resistance ensures minimal power loss during operation, enhancing overall circuit efficiency.

Maximum Switch-on Time: 85 ns

Fast switch-on time improves system responsiveness, which is critical in high-speed applications.

Length: 2.3 mm

A compact length of 2.3 mm contributes to the product's overall small profile, beneficial for space-constrained applications.

Maximum Switch-off Time: 30 ns

Short switch-off time minimizes latency in signal processing, making it ideal for high-speed switching applications.

Temperature Grade: MILITARY

This device meets military-grade specifications, ensuring reliability and performance under extreme conditions.

Technology: CMOS

CMOS technology enhances power efficiency, making this product suitable for battery-operated devices.

Terminal Form: NO LEAD

No lead design reduces the footprint and enhances compatibility with lead-free soldering processes.

Terminal Pitch: 0.4 mm

A 0.4 mm terminal pitch allows for high-density designs, making it suitable for modern, compact electronics.

Maximum Supply Voltage (Vsup): 4.3 V

Supporting a maximum supply voltage of 4.3 V provides flexibility across various applications and voltage requirements.

Nominal Off-state Isolation: 66 dB

High off-state isolation ensures minimal signal interference, making it suitable for sensitive applications.

Switching (V): BREAK-BEFORE-MAKE

The break-before-make switching ensures stable operation without signal overlaps, which is essential for reliable data communication.

Nominal On-state Resistance Match: 0.1 ohm

A nominal on-state resistance match of 0.1 ohm ensures consistent performance across multiple switches, reducing variations in signal integrity.

Technical Specifications

Multiplexers & Switches STG3684ADTR attributes and parameters. Explore more Multiplexers & Switches devices from STMicroelectronics

Specs

Additional Features:

2-CHANNEL MUX/DEMUX

Other IC type:

JESD-30 Code:

R-XDSO-N10

JESD-609 Code:

e4

Length:

2.3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

2

No. of Terminals:

10

Nominal Off-state Isolation:

66 dB

Nominal On-state Resistance Match:

.1 ohm

Maximum On-state Resistance (Ron):

.7 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC10,.08,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

4.3 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

2.3 V

Surface Mount:

YES

Maximum Switch-off Time:

30 ns

Maximum Switch-on Time:

85 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium (Ni/Pd)

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2 mm

Trade Compliance

STG3684ADTR Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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