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M87C257-10C3TR

STMicroelectronics

M87C257-10C3TR by STMicroelectronics

M87C257-10C3TR by STMicroelectronics is a 32Kx8 OTP ROM with a max access time of 100 ns, ideal for automotive applications. It operates asynchronously at a nominal voltage of 5V and features a compact chip carrier package. With an operating temp range of -40 °C to 125 °C, it ensures reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,096 parts In-Stock

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3,096

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Anansix

USA . 1,805 parts In-Stock

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1,805

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Digiode

USA . 710 parts In-Stock

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710

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,193 parts In-Stock

1+ parts

$4.266

100+ parts

-

1k+ parts

$3.839

10k+ parts

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1,193

$4.266

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$3.839

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MKK Technologies

India . 914 parts In-Stock

1+ parts

$8.022

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914

$8.022

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DigiPath Technology Company

USA . 914 parts In-Stock

1+ parts

$8.022

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914

$8.022

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Corphita

USA . 2,634 parts In-Stock

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2,634

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Parana Technologies

USA . 1,699 parts In-Stock

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$5.101

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1,699

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$5.101

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Overview

Unlock the potential of your designs with the M87C257-10C3TR from STMicroelectronics, a leader in semiconductor innovation. This high-quality OTP ROM offers unparalleled reliability and efficiency for automotive applications, ensuring seamless performance even in extreme conditions. With its compact design and exceptional operating range, it delivers significant advantages, reducing development time while enhancing product longevity. Choose STMicroelectronics for unmatched quality and superior value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Utilizing plastic/epoxy material ensures a durable and lightweight design, making it ideal for various applications.

Surface Mount: YES

Surface mount technology allows for a compact design, facilitating higher density PCB layouts and improving overall system performance.

Package Shape: RECTANGULAR

Rectangular package shape is standard for efficient PCB layout, enabling easier integration into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for straightforward interfacing with other digital logic, enhancing overall system speed and efficiency.

Input/Output Type: COMMON

Common input/output type provides flexibility for various applications, simplifying integration with other components.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes it compatible with a wide range of digital circuits, ensuring easy implementation.

Power Supplies (V): 5

Single power supply requirement streamlines design and reduces complexity in power management within the system.

No. of Terminals: 32

Having 32 terminals enables adequate connectivity for various functions and greater configurability in designs.

Package Style (Meter): CHIP CARRIER

Chip carrier style supports efficient thermal management and electrical performance, crucial for reliable operation in demanding environments.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C ensures reliability in high-temperature environments, making it suitable for automotive and industrial applications.

Organization: 32KX8

32Kx8 organization offers a good balance between capacity and access speed, accommodating a broad range of applications effectively.

Output Characteristics: 3-STATE

3-state output configuration provides flexibility in bus configurations, allowing multiple devices to share data lines without interference.

Minimum Operating Temperature: -40 °C

Operating as low as -40 °C ensures functionality in extreme cold conditions, making it ideal for automotive and outdoor applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish aids in solderability, enhancing reliability and longevity of connections in the assembly.

Terminal Position: QUAD

Quad terminal positioning allows for efficient use of space on printed circuit boards, facilitating compact designs.

Maximum Seated Height: 3.56 mm

A compact height allows for shallow mounting, beneficial in space-constrained applications.

Width: 11.43 mm

This width provides a balance between size and functionality, allowing it to fit easily into a variety of design layouts.

Minimum Supply Voltage (Vsup): 4.5 V

Supporting a minimum supply voltage of 4.5V ensures stable operation in a range of power supply conditions.

Length: 13.97 mm

The length is optimized for integration into compact circuit designs, facilitating effective handling and placement.

Temperature Grade: AUTOMOTIVE

Automotive temperature grading meets the rigorous durability standards needed for automotive electronics, enhancing reliability.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it suitable for battery-operated devices and sensitive applications.

Parallel or Serial: PARALLEL

Parallel interfacing supports faster data transfer rates, making it a good choice for applications requiring high-speed data access.

Terminal Form: J BEND

J bend terminals facilitate easy handling and assembly, ensuring robust connections for reliable performance.

Maximum Supply Current: 30 mA

Designed with a maximum supply current of 30 mA, it efficiently meets power requirements while maintaining performance.

No. of Words: 32768 words

With 32,768 words, it delivers ample storage capacity for various applications, balancing size and performance.

Memory Width: 8

An 8-bit memory width allows for efficient data handling and processing in many digital applications.

Terminal Pitch: 1.27 mm

1.27 mm terminal pitch supports compatibility with standard PCB layouts, enhancing ease of design and fabrication.

No. of Words Code: 32K

A word code of 32K is suitable for various memory applications, providing a versatile solution for designers.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5V provides flexibility in power supply design, accommodating a variety of systems.

Memory Density: 262144 bit

With a memory density of 262,144 bits, it can store significant data, making it effective for many data-intensive applications.

Memory IC Type: OTP ROM

As an OTP ROM, it is ideal for applications requiring single-time programmability, providing flexibility in firmware storage solutions.

Maximum Standby Current: 0.0001 Amp

With a maximum standby current of 0.0001 Amp, it ensures minimal power drain in idle states, enhancing overall energy efficiency.

Maximum Access Time: 100 ns

Fast maximum access time of 100 ns allows for quick data retrieval, making it suitable for high-performance applications.

Technical Specifications

OTP ROM M87C257-10C3TR attributes and parameters. Explore more OTP ROM devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

OTP ROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.43 mm

Trade Compliance

M87C257-10C3TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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