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M87C257-10C7

STMicroelectronics

M87C257-10C7 by STMicroelectronics

M87C257-10C7 by STMicroelectronics is a 32Kx8 OTP ROM with a 5V supply, ideal for industrial applications. It features a max operating temp of 105 °C and access time of 100 ns. This compact chip carrier design ensures efficient performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,137 parts In-Stock

1+ parts

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4,137

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Digiode

USA . 692 parts In-Stock

1+ parts

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692

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Anansix

USA . 668 parts In-Stock

1+ parts

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668

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,151 parts In-Stock

1+ parts

$4.773

100+ parts

-

1k+ parts

$4.296

10k+ parts

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1,151

$4.773

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$4.296

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MKK Technologies

India . 514 parts In-Stock

1+ parts

$8.975

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514

$8.975

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DigiPath Technology Company

USA . 514 parts In-Stock

1+ parts

$8.975

100+ parts

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514

$8.975

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Parana Technologies

USA . 1,895 parts In-Stock

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$5.707

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1,895

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$5.707

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Corphita

USA . 1,211 parts In-Stock

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1,211

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Overview

Unlock unparalleled reliability and performance with the M87C257-10C7 OTP ROM from STMicroelectronics. Renowned for their commitment to quality, STMicroelectronics delivers a robust solution perfect for industrial applications that demand durability and efficiency in extreme conditions. With its compact design and superior power management, this memory IC is ideal for consumer electronics, automotive systems, and more. Experience the blend of innovation and dependability that drives your projects forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials provides durability and protection against environmental factors, ensuring reliable performance in various applications.

Surface Mount: YES

Surface mount technology allows for compact design and easier integration into modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape optimizes board space, making it suitable for a wide range of circuit designs.

Input/Output Type: COMMON

Common I/O type simplifies interfacing with other components, facilitating easier integration into various systems.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V makes this OTP ROM compatible with a wide range of existing systems and power supplies.

Power Supplies (V): 5

Supports standard 5V power supplies, enhancing compatibility and ease of design for electrical engineers.

No. of Terminals: 32

Having 32 terminals ensures sufficient connections for various application needs, allowing for more complex interfacing.

Package Style (Meter): CHIP CARRIER

The chip carrier style is ideal for secure connections and minimizes the risk of damage during handling and operation.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this product is suitable for use in high-temperature environments, enhancing its reliability.

Organization: 32KX8

The organization of 32KX8 ensures efficient memory use and aligns with common data structures in applications.

Output Characteristics: 3-STATE

3-state output minimizes signaling conflicts and allows multiple devices to share the same data bus, enhancing system flexibility.

Minimum Operating Temperature: -40 °C

The ability to operate in extreme low temperatures makes this OTP ROM ideal for harsh environmental conditions.

Terminal Finish: MATTE TIN

Matte tin finish prevents oxidation and ensures better solderability, improving assembly reliability.

Terminal Position: QUAD

Quad terminal positioning allows for higher density packing on circuit boards, maximizing space utilization.

Temperature Grade: INDUSTRIAL

Rated for industrial use means this product is built for durability and reliability in demanding environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it suitable for battery-operated devices.

Terminal Form: J BEND

J bend terminals provide secure mechanical stability and electrical connectivity, minimizing the risk of disconnection.

Maximum Supply Current: 30 mA

A maximum supply current of 30 mA ensures efficient power usage and contributes to extended battery life in portable applications.

No. of Words: 32768 words

Provides ample storage for data and program code, making it suitable for a variety of applications.

Memory Width: 8

An 8-bit memory width is optimal for many applications, allowing efficient data processing and storage.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch allows for high-density mounting, fitting more components into smaller spaces.

No. of Words Code: 32K

With a coding of 32K words, this OTP ROM can hold substantial amounts of data, suitable for various applications.

Memory Density: 262144 bit

High memory density supports extensive data storage needs, making it ideal for applications requiring a significant amount of ROM.

Memory IC Type: OTP ROM

One-Time Programmable ROM is perfect for applications where data permanence is crucial, like firmware storage.

Maximum Standby Current: 0.0001 Amp

An extremely low standby current contributes to energy efficiency, making it suitable for battery-operated devices.

Maximum Access Time: 100 ns

Fast access time of 100 ns ensures quick data retrieval, enhancing overall system performance.

Technical Specifications

OTP ROM M87C257-10C7 attributes and parameters. Explore more OTP ROM devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

32

No. of Words:

32768 words

No. of Words Code:

32K

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.0001 Amp

Sub-Category:

OTP ROMs

Maximum Supply Current:

30 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

M87C257-10C7 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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