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M58BW16FB4ZA3F

STMicroelectronics

M58BW16FB4ZA3F by STMicroelectronics

M58BW16FB4ZA3F from STMicroelectronics is a 32-bit NOR Flash memory with a density of 33.55Mbit, operating at 3.3V and supporting synchronous mode. It features an automotive temperature grade, ensuring reliability in harsh conditions. Ideal for embedded applications, it offers fast access times of 45ns and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,545 parts In-Stock

1+ parts

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3,545

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Digiode

USA . 1,217 parts In-Stock

1+ parts

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1,217

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Anansix

USA . 300 parts In-Stock

1+ parts

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,182 parts In-Stock

1+ parts

$3.397

100+ parts

-

1k+ parts

$3.057

10k+ parts

-

1,182

$3.397

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$3.057

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MKK Technologies

India . 251 parts In-Stock

1+ parts

$6.387

100+ parts

-

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251

$6.387

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DigiPath Technology Company

USA . 251 parts In-Stock

1+ parts

$6.387

100+ parts

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251

$6.387

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-

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Corphita

USA . 6,888 parts In-Stock

1+ parts

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6,888

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Futuretech Components

Singapore . 5,000 parts In-Stock

1+ parts

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5,000

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Parana Technologies

USA . 1,847 parts In-Stock

1+ parts

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100+ parts

$4.061

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1,847

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$4.061

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Overview

Elevate your designs with the M58BW16FB4ZA3F Flash Memory from STMicroelectronics, renowned for its commitment to innovation and quality. This versatile, low-profile memory solution is perfect for automotive applications, delivering reliability in extreme temperatures while ensuring rapid access times. With ST's trusted heritage, you gain not just a component, but a powerful ally in enhancing performance and efficiency in your projects. Experience seamless integration and unlock new possibilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy construction ensures good thermal performance and resilience against environmental factors.

Surface Mount: YES

Surface mount technology allows for compact PCB designs and efficient use of space, making integration easier in high-density applications.

Package Shape: RECTANGULAR

The rectangular shape provides a low-profile footprint, suitable for space-constrained designs.

Operating Mode: SYNCHRONOUS

Synchronous mode offers faster data transfer rates, improving overall system performance.

Nominal Supply Voltage / Vsup: 3.3V

Standard voltage compatibility (3.3V) makes it suitable for a wide range of microcontrollers and digital circuits.

Power Supplies (V): 2.5/3.3, 3/3.3

Supports multiple supply voltages, enhancing versatility in various applications.

No. of Terminals: 80

An ample number of terminals enables connections to multiple functionality and improves flexibility in design.

Package Style (Meter): GRID ARRAY, LOW PROFILE

Grid array packaging provides excellent thermal and electrical performance while maintaining a low profile height.

Maximum Operating Temperature: 125 °C

High maximum operating temperature supports use in demanding automotive applications, enhancing reliability.

Organization: 1MX32

Offers a good balance of memory organization, suitable for various applications requiring sizeable data storage.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures reliable operation in harsh environments, making it ideal for automotive and industrial applications.

No. of Sectors/Size: 8,31

Multiple sectors allow for easier management of data, improving efficiency during read/write operations.

Terminal Position: BOTTOM

Bottom terminal positioning simplifies routing on PCB, enhancing layout design capabilities.

Maximum Seated Height: 1.7 mm

Low seated height supports slim design requirements, making it suitable for compact devices.

Width: 10 mm

Narrow width aids in saving board space, facilitating integration into tighter designs.

Minimum Supply Voltage (Vsup): 2.7 V

Low minimum supply voltage allows for operation in lower power conditions, contributing to energy efficiency.

Type: NOR TYPE

NOR type flash provides fast read speeds, ideal for embedded systems requiring quicker access to stored data.

Common Flash Interface: YES

Compatibility with common flash interfaces streamlines integration with existing designs and reduces time to market.

Length: 12 mm

Compact length enables easy placement on densely populated PCBs.

Programming Voltage (V): 3.3

Standard programming voltage simplifies the design of programming circuits, reducing complexity.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive standards ensures compliance and reliability in vehicle applications.

Technology: CMOS

CMOS technology offers low power consumption, enhancing the product's suitability for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel interface allows for increased data throughput, improving performance in data-intensive applications.

Terminal Form: BALL

Ball terminals enhance soldering stability and reliability in surface mount applications.

Sector Size (Words): 2K, 16K

Various sector sizes offer flexibility in memory management and efficiency in write/erase operations.

Maximum Supply Current: 50 mA

Reasonable maximum supply current ensures efficient power usage while maintaining high performance.

No. of Words: 1,048,576 words

High word count provides substantial storage capacity, enabling complex applications and larger data sets.

Memory Width: 32

32-bit memory width enables efficient data handling, optimizing performance for modern processors.

Terminal Pitch: 1 mm

1 mm terminal pitch supports high-density applications, facilitating designs with limited space.

No. of Words Code: 1M

1M words code capacity effectively balances performance and cost in high storage applications.

Command User Interface: YES

User-friendly command interface simplifies integration and accelerates development time.

Maximum Supply Voltage (Vsup): 3.6 V

Allows for operating at a slightly elevated supply, which can enhance performance while maintaining compatibility.

Boot Block: BOTTOM

Bottom boot block configuration improves system reliability by protecting critical startup code from accidental writes.

Memory Density: 33,554,432 bit

High memory density ensures ample storage in a compact form factor, ideal for advanced embedded systems.

Memory IC Type: FLASH

Flash memory's non-volatile nature preserves data even without power, critical for many applications.

Maximum Standby Current: 0.00015 Amp

Very low standby current is energy efficient, extending the battery life of portable devices.

Maximum Access Time: 45 ns

Fast access time ensures quicker data retrieval, enhancing the responsiveness of applications utilizing this memory.

Technical Specifications

Flash Memory M58BW16FB4ZA3F attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

45 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B80

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Sectors/Size:

8,31

No. of Terminals:

80

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA80,8X10,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3,3/3.3

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.7 mm

Sector Size (Words):

2K,16K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M58BW16FB4ZA3F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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