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M27C160-50F1

STMicroelectronics

M27C160-50F1 by STMicroelectronics

M27C160-50F1 by STMicroelectronics is a 16-bit EPROM with a 5V supply, featuring asynchronous operation and a max access time of 50 ns. It supports up to 1M words in a ceramic package, ideal for commercial applications. Its dual terminal form ensures reliable performance in various electronic devices.

Median Price

$8.580

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 28 parts In-Stock

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$8.580

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28

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Vyrian

USA . 8,949 parts In-Stock

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Anansix

USA . 716 parts In-Stock

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Digiode

USA . 652 parts In-Stock

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Cyclops Electronics Ltd

UK . 67 parts In-Stock

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67

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 86 parts In-Stock

1+ parts

$2.607

100+ parts

-

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$2.347

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86

$2.607

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$2.347

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MKK Technologies

India . 1,260 parts In-Stock

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$4.903

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DigiPath Technology Company

USA . 1,260 parts In-Stock

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$4.903

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1,260

$4.903

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AZTECH Wire

Italy . 879 parts In-Stock

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$8.590

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879

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Microchip USA

USA . 338 parts In-Stock

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$15.319

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338

$15.319

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A-Z Elektronik GmbH

Germany . 6,869 parts In-Stock

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6,869

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,579 parts In-Stock

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Kepictronics

USA . 2,200 parts In-Stock

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Parana Technologies

USA . 1,436 parts In-Stock

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$3.117

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Corphita

USA . 583 parts In-Stock

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Overview

Elevate your designs with the M27C160-50F1 EPROM from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This high-performance memory device is crafted for reliability and efficiency, making it ideal for applications ranging from automotive to industrial systems. Enjoy benefits like reduced power consumption and exceptional speed, all wrapped in a robust ceramic package. Unlock new possibilities and ensure long-lasting performance with ST's quality and proven expertise!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This durable material provides excellent protection against environmental factors, ensuring reliability in various applications.

Package Shape: RECTANGULAR

The rectangular shape enables efficient space utilization on PCBs, making it suitable for compact designs.

Operating Mode: ASYNCHRONOUS

ASYNCHRONOUS operation allows for faster data retrieval without the need for synchronization, enhancing performance in real-time applications.

Input/Output Type: COMMON

A common I/O configuration simplifies design and integration with other components, facilitating easier system assembly.

Nominal Supply Voltage / Vsup: 5 V

A nominal supply voltage of 5 V is standard in many electronic applications, ensuring compatibility with a wide range of devices.

Power Supplies: 5 V

The need for a single 5 V power supply further simplifies the design and reduces power management complexity.

No. of Terminals: 42

A higher number of terminals supports more connections, enabling greater integration with other components in complex systems.

Package Style (Meter): IN-LINE

In-line packaging style allows for easy handling and assembly in automated processes, improving production efficiency.

Alternate Memory Width: 8

The option for an 8-bit memory width offers flexibility in data handling, catering to varying system requirements.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this EPROM can operate in a wide range of environments, adding versatility to its applications.

Organization: 1MX16

A 1MX16 organization provides a balance between density and access speed, making it suitable for many applications.

Output Characteristics: 3-STATE

3-state output characteristics facilitate multiple devices sharing the same bus, enhancing design flexibility.

Minimum Operating Temperature: 0 °C

Operational capabilities down to 0 °C ensure reliable performance in colder environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and oxidation resistance, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal positioning allows for both sides of the device to be used for connectivity, which can be beneficial in certain PCB layouts.

Maximum Seated Height: 5.71 mm

A low seated height is advantageous for fitting into compact spaces, maintaining the integrity of the overall design.

Width: 15.24 mm

The compact width ensures it can be easily integrated into tight spaces on circuit boards.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5 V allows the device to work in lower voltage environments, expanding its usability.

Length: 54.635 mm

The length is optimal for various PCB layouts, allowing for versatile mounting options.

Temperature Grade: COMMERCIAL

Commercial temperature grades ensure the component is suitable for most consumer applications.

Technology: CMOS

CMOS technology offers low power consumption and high efficiency, making it ideal for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel architecture allows for faster data transfer rates, making it suitable for high-performance applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a robust connection, enhancing durability against mechanical stress.

Maximum Supply Current: 70 mA

This current rating is manageable for most applications, ensuring compatibility with typical power supply designs.

No. of Words: 1048576 words

A capacity of 1,048,576 words provides ample storage for many applications, enhancing data handling capabilities.

Memory Width: 16

A 16-bit memory width allows for efficient data processing and storage, catering to a variety of application needs.

Terminal Pitch: 2.54 mm

The standard terminal pitch simplifies PCB design and component placement, enhancing manufacturability.

No. of Words Code: 1M

The 1M word capacity indicates a substantial amount of data can be stored, suitable for diverse applications.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5 V ensures safe operation within regulated voltage ranges, crucial for device longevity.

Memory Density: 16777216 bit

With a memory density of 16,777,216 bits, this EPROM is well-equipped for various data-intensive applications.

Memory IC Type: UVPROM

As a UVPROM, this EPROM can be erased and reprogrammed, providing flexibility for iterative development and updates.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current aids in energy efficiency, especially important for battery-powered designs.

Maximum Access Time: 50 ns

A maximum access time of 50 ns enables rapid data retrieval, ideal for performance-critical applications.

Technical Specifications

EPROM M27C160-50F1 attributes and parameters. Explore more EPROM devices from STMicroelectronics

Specs

Maximum Access Time:

50 ns

Alternate Memory Width:

8

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T42

JESD-609 Code:

e3

Length:

54.635 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

42

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP42,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.71 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

M27C160-50F1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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