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HCF4012BEY

STMicroelectronics

HCF4012BEY by STMicroelectronics

HCF4012BEY by STMicroelectronics is a CMOS Logic Gates IC with 2 functions, 4 inputs, and 250 ns propagation delay at 5V. It operates in a temperature range of -55 to 125 °C and is suitable for military-grade applications requiring high-speed signal processing.

Median Price

$6.150

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 23 parts In-Stock

1+ parts

$6.150

100+ parts

$4.620

1k+ parts

$4.000

10k+ parts

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23

$6.150

$4.620

$4.000

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Vyrian

USA . 8,337 parts In-Stock

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A&K Electronics

USA . 4,597 parts In-Stock

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4,597

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Bristol Electronics

USA . 4,597 parts In-Stock

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4,597

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Standard Data Resources

USA . 3,000 parts In-Stock

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3,000

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Digiode

USA . 2,962 parts In-Stock

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2,962

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Rotakorn

Sweden . 2,547 parts In-Stock

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Anansix

USA . 1,524 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,372 parts In-Stock

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1,372

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Distributors (Availability)

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Native Components

USA . 440 parts In-Stock

1+ parts

$0.069

100+ parts

-

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10k+ parts

$0.066

440

$0.069

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-

$0.066

Northwest PG Solutions

USA . 2,194 parts In-Stock

1+ parts

$0.076

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$0.067

2,194

$0.076

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$0.067

Andel Nordic

Denmark . 116 parts In-Stock

1+ parts

$9.936

100+ parts

-

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$9.539

10k+ parts

$9.539

116

$9.936

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$9.539

$9.539

AZTECH Wire

Italy . 500 parts In-Stock

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$10.780

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500

$10.780

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Microchip USA

USA . 247 parts In-Stock

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$14.221

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247

$14.221

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IDEA Electronic Components Group

UK . 1,147 parts In-Stock

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$29.537

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$26.583

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$29.537

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$26.583

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MKK Technologies

India . 1,526 parts In-Stock

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$55.542

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$55.542

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DigiPath Technology Company

USA . 1,526 parts In-Stock

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$55.542

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$55.542

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Corphita

USA . 4,838 parts In-Stock

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Parana Technologies

USA . 966 parts In-Stock

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$35.316

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966

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$35.316

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Overview

Unleash the power of cutting-edge technology with the HCF4012BEY from STMicroelectronics. This high-quality logic gate offers unparalleled performance and reliability, making it the ideal choice for a wide range of applications. With its innovative design and advanced features, this product delivers exceptional value and benefits to customers looking for top-notch electronic components. Trust STMicroelectronics to provide you with the best in class solutions for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body ensures the product is reliable and easy to handle.

Propagation Delay At Nominal Supply: 250 ns

Fast propagation delay ensures efficient operation of the logic gates.

No. of Functions: 2

Having multiple functions in one component saves space and simplifies circuit design.

Nominal Supply Voltage / Vsup (V): 5

Common supply voltage of 5V makes it compatible with a wide range of applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall performance.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for reliable operation in various environmental conditions.

Technical Specifications

Logic Gates HCF4012BEY attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

2

No. of Inputs:

4

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

250 ns

Propagation Delay (tpd):

250 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

5.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

20 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

HCF4012BEY Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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