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HCF4001BE

STMicroelectronics

HCF4001BE by STMicroelectronics

HCF4001BE by STMicroelectronics is a CMOS logic gate with 4 functions and 2 inputs. It operates at a supply voltage range of 3-15V, with a propagation delay of 250ns. This IC is commonly used in industrial applications due to its wide temperature range and through-hole terminal form.

Median Price

$0.237

Lifecycle Status

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35

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TEDSS.com

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PC Components Company LLC

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Connector Distribution Corp

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Right Parts Inc.

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Mil-Aero Solutions, Inc.

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Elcom Components

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Speed Components Ltd

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IDEA Electronic Components Group

UK . 1,880 parts In-Stock

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MKK Technologies

India . 1,887 parts In-Stock

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DigiPath Technology Company

USA . 1,887 parts In-Stock

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A-Z Elektronik GmbH

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Cyclops Electronics Ltd (Excess)

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Parana Technologies

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GreenTree Electronics

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Overview

Upgrade your electronic projects with the high-quality HCF4001BE logic gate by STMicroelectronics. With a durable plastic/epoxy package body material and fast 250 ns propagation delay, this component is perfect for a wide range of applications. Whether you're designing circuits for industrial automation or consumer electronics, this logic gate's 4 functions and 2 inputs deliver exceptional performance. Trust in STMicroelectronics' reputation for excellence and innovation to bring value to your projects. Experience the benefits of reliable functionality and precision engineering with the HCF4001BE logic gate today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the product durable and resistant to damage, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 250 ns

With a low propagation delay, this logic gate operates efficiently and quickly, making it suitable for high-speed applications.

No. of Functions: 4

With 4 functions in one device, this logic gate offers versatility and flexibility in circuit design.

No. of Inputs: 2

Having 2 inputs allows for basic logic operations, making it suitable for simple logic gate applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V, this logic gate is compatible with standard electronic circuits.

Load Capacitance (CL): 50 pF

The low load capacitance of 50 pF ensures efficient performance and minimal signal distortion in the circuit.

Power Supplies (V): 3/15

With power supplies ranging from 3V to 15V, this logic gate is versatile and can be used in a wide range of electronic systems.

No. of Terminals: 14

Having 14 terminals allows for easy connectivity and integration into circuits, making it convenient for circuit designers.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this logic gate can withstand high temperatures, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40 °C makes this logic gate suitable for use in extreme environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and reliability in the connections, improving the overall performance of the logic gate.

Technology: CMOS

Utilizing CMOS technology, this logic gate offers low power consumption and high noise immunity, making it efficient and reliable.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy PCB mounting and soldering, enhancing the ease of use and installation of the logic gate.

Technical Specifications

Logic Gates HCF4001BE attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e0

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

3/15

Propagation Delay At Nominal Supply:

250 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

15 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

HCF4001BE Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-15-068-2726, 5962150682726

NIIN

150682726

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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