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74V1T07CTR

STMicroelectronics

74V1T07CTR by STMicroelectronics

74V1T07CTR by STMicroelectronics is a CMOS logic gate with a 10 ns propagation delay and operates at a nominal voltage of 5 V. It features an open-drain output and supports military-grade temperatures from -55 °C to 125°C. Ideal for compact, high-speed applications in harsh environments.

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1k+

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Vyrian

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Digiode

USA . 632 parts In-Stock

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Anansix

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578

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Microchip USA

USA . 166 parts In-Stock

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166

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AZTECH Wire

Italy . 938 parts In-Stock

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$11.380

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$11.380

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IDEA Electronic Components Group

UK . 2,294 parts In-Stock

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Native Components

USA . 345 parts In-Stock

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$35.921

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$34.484

345

$35.921

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$34.484

Northwest PG Solutions

USA . 1,623 parts In-Stock

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MKK Technologies

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DigiPath Technology Company

USA . 1,014 parts In-Stock

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$47.828

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Corphita

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Parana Technologies

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Overview

Unlock innovation with the 74V1T07CTR from STMicroelectronics, a leader in quality and reliability. This versatile logic gate combines robust performance with a compact design, making it ideal for high-speed applications across consumer electronics, automotive systems, and industrial automation. With its exceptional power efficiency and proven military-grade resilience, the 74V1T07CTR empowers your projects to achieve optimal functionality while ensuring long-lasting durability. Elevate your engineering solutions effortlessly!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as a package material ensures durability and reliability, making it suitable for various environments.

Propagation Delay At Nominal Supply: 10 ns

A low propagation delay of 10 ns indicates fast response times, essential for high-speed applications in digital circuits.

Surface Mount: YES

Being surface mount enables compact design, allowing for efficient use of PCB space, which is critical in modern electronics.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout on circuit boards, enhancing organization and reducing space waste.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with a wide range of devices and circuits.

Load Capacitance (CL): 50 pF

A load capacitance of 50 pF allows for efficient operation in various signal environments, ensuring signal integrity.

Power Supplies (V): 5

Utilizing a single 5V power supply simplifies circuit design and increases the versatility of the product.

No. of Terminals: 5

Having 5 terminals provides a balance between functionality and ease of integration into circuits.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile design facilitate high-density mounting, making it ideal for compact electronic devices.

Maximum I (ol): 8 Amp

A maximum output current of 8 Amps allows this product to drive heavy loads, meeting the demands of more powerful applications.

Propagation Delay (tpd): 10 ns

Reiterating the low propagation delay, it ensures fast switching speeds which are crucial in high-performance circuits.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature makes this product suitable for use in harsh environments and industrial applications.

Output Characteristics: OPEN-DRAIN

Open-drain output allows for flexible interfacing with different voltage levels, enhancing compatibility with other devices.

Minimum Operating Temperature: -55 °C

A low minimum operating temperature ensures reliable performance in extreme cold climates, perfect for military applications.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish offers good solderability and corrosion resistance, ensuring longevity in various applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design for effective mounting options.

Maximum Seated Height: 1.1 mm

A maximum seated height of 1.1 mm allows for low-profile designs, perfect for compact electronics.

Width: 1.25 mm

A narrow width of 1.25 mm allows for more compact PCB layouts and integration into smaller devices.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5V allows for flexibility in power supply options, accommodating a variety of systems.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures compatibility with modern assembly processes for high-quality soldering.

Peak Reflow Temperature °C: 260

Handling a peak reflow temperature of 260 °C indicates that this product is suitable for lead-free soldering processes.

Length: 2 mm

A compact length of 2 mm is ideal for space-constrained designs, enhancing the versatility of the component.

Temperature Grade: MILITARY

Military grade temperature rating ensures high reliability and performance in critical mission applications.

Technology: CMOS

Using CMOS technology provides low power consumption and high noise immunity, making it ideal for battery-operated devices.

Terminal Form: GULL WING

Gull wing terminals facilitate easier and more reliable soldering, ensuring good electrical connections.

Packing Method: TR

Tape and reel packing allows for automated handling and placement, streamlining the manufacturing process.

Terminal Pitch: 0.65 mm

A 0.65 mm terminal pitch allows for denser packing on PCBs while maintaining electrical integrity.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides a safety margin, ensuring stable operation without damage to the component.

Technical Specifications

Logic Gates 74V1T07CTR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

10 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

74V1T07CTR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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