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2SD1949

ROHM

2SD1949 by ROHM

ROHM 2SD1949 is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 0.5A. Ideal for switching applications, it has a min. DC current gain of 82 and can operate at up to 150°C. Its small outline package makes it suitable for surface mount designs.

Median Price

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Lifecycle Status

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Nova Conductors

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Metaverse IC Inc.

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality 2SD1949 Small Signal Bipolar Junction Transistor from ROHM. Manufactured with precision and expertise, this NPN transistor is perfect for switching applications in a compact and durable package. With a minimum DC current gain of 82 and a maximum collector-emitter voltage of 50V, this transistor offers reliable performance and efficiency. Trust ROHM to deliver exceptional products that meet your needs and elevate your projects to new heights. Upgrade your circuits today with the 2SD1949 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and durable, making it easy to handle and suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with other components in electronic circuits, simplifying the design and construction of switching applications.

Configuration: SINGLE

The single configuration simplifies the circuit layout and provides easier troubleshooting and maintenance in the event of any issues.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast response times and efficient performance in on/off operation.

Surface Mount: YES

Being surface mountable, this transistor can be easily mounted on PCBs, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy positioning and placement on the PCB, ensuring a neat and organized layout.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 82

The minimum DC current gain of 82 ensures consistent and reliable amplification of current in the circuit, improving overall performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50 V, this transistor can handle higher voltage levels, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistor elements due to its high performance, reliability, and versatility in electronic circuits.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5 A allows for high current-carrying capability, making this transistor suitable for a wide range of applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper provides good conductivity and solderability, ensuring secure connections and reliable performance.

Terminal Position: DUAL

The dual terminal position allows for easy connectivity and integration with other components, facilitating the assembly and installation process.

Maximum Time At Peak Reflow Temperature (s): 10

With a maximum time of 10 seconds at peak reflow temperature, this transistor is suitable for reflow soldering processes, ensuring secure and reliable connections.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and mounting of the transistor on PCBs, enhancing reliability and performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1949 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

82

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SD1949 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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