Loading...

SZESD8351HT1G

Onsemi

SZESD8351HT1G by Onsemi

SZESD8351HT1G by Onsemi is a unidirectional avalanche diode with a breakdown voltage of 7V and max clamping voltage of 11.2V. It is designed for transient suppression applications in automotive electronics, meeting AEC-Q101 standards. This single-configured device has a small outline package style and operates b/w -55°C to 125°C.

Median Price

$0.304

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 782 parts In-Stock

1+ parts

$0.448

100+ parts

$0.205

1k+ parts

$0.122

10k+ parts

-

782

$0.448

$0.205

$0.122

-

DigiKey

USA . 205,375 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.420

205,375

-

-

-

$0.420

Verical

USA . 2,938 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.187

2,938

-

-

-

$0.187

Flip Electronics (Authorized)

USA . 2,875 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,875

-

-

-

-

Chip1Stop

Japan . 1,014 parts In-Stock

1+ parts

-

100+ parts

$0.166

1k+ parts

$0.132

10k+ parts

-

1,014

-

$0.166

$0.132

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.122

100+ parts

-

1k+ parts

-

10k+ parts

-

750

$0.122

-

-

-

Digiode

USA . 722 parts In-Stock

1+ parts

$0.158

100+ parts

-

1k+ parts

-

10k+ parts

-

722

$0.158

-

-

-

Flip Electronics

USA . 205,375 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

205,375

-

-

-

-

Chip Stock

USA . 117,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

117,500

-

-

-

-

Vyrian

USA . 12,771 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,771

-

-

-

-

Bristol Electronics

USA . 3,005 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,005

-

-

-

-

Atlantic Semiconductor

USA . 3,005 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,005

-

-

-

-

Prism Electronics

USA . 45 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

45

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 93 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

-

10k+ parts

-

93

$0.120

-

-

-

Argo Parts USA

USA . 516 parts In-Stock

1+ parts

$0.122

100+ parts

-

1k+ parts

-

10k+ parts

$0.119

516

$0.122

-

-

$0.119

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.122

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.122

-

-

-

Ampacity Inc.

Singapore . 17,199 parts In-Stock

1+ parts

$0.141

100+ parts

-

1k+ parts

-

10k+ parts

-

17,199

$0.141

-

-

-

Semicontronic

India . 17,116 parts In-Stock

1+ parts

$0.141

100+ parts

$0.137

1k+ parts

$0.137

10k+ parts

-

17,116

$0.141

$0.137

$0.137

-

Corphita

USA . 2,251 parts In-Stock

1+ parts

$0.149

100+ parts

-

1k+ parts

-

10k+ parts

-

2,251

$0.149

-

-

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.162

100+ parts

$0.147

1k+ parts

$0.133

10k+ parts

-

500

$0.162

$0.147

$0.133

-

Component Stockers USA

USA . 12,763 parts In-Stock

1+ parts

$0.430

100+ parts

$0.190

1k+ parts

$0.110

10k+ parts

$0.100

12,763

$0.430

$0.190

$0.110

$0.100

Continental Prestige Electronics

USA . 125 parts In-Stock

1+ parts

$0.465

100+ parts

$0.224

1k+ parts

-

10k+ parts

-

125

$0.465

$0.224

-

-

AZTECH Wire

Italy . 258 parts In-Stock

1+ parts

$21.100

100+ parts

-

1k+ parts

-

10k+ parts

-

258

$21.100

-

-

-

Kepictronics

USA . 66,540 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

66,540

-

-

-

-

Lixinc

USA . 12,440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,440

-

-

-

-

Perfect Parts

USA . 6,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,720

-

-

-

-

A-Z Elektronik GmbH

Germany . 6,492 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,492

-

-

-

-

Problanco Electronics

Mexico . 5,932 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,932

-

-

-

-

TANS Electronics

Latvia . 4,610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,610

-

-

-

-

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

SupplyDigital Components

Austria . 1,987 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,987

-

-

-

-

Kulean Microsystems

USA . 1,878 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,878

-

-

-

-

UHIMA Technologies

Türkiye . 807 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

807

-

-

-

-

Overview

Enhance your electronic designs with the high-quality SZESD8351HT1G by Onsemi, a top-tier manufacturer known for producing reliable transient suppression devices. This single-configured device, featuring a small outline package, is perfect for protecting sensitive circuits from voltage spikes. With a nominal breakdown voltage of 7V and maximum clamping voltage of 11.2V, this diode offers superior protection against unexpected surges. Whether you're designing industrial equipment, automotive electronics, or consumer devices, this avalanche technology diode provides the peace of mind and reliability you need. Upgrade your designs today with the SZESD8351HT1G and experience the benefits of top-of-the-line protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and thermal resistance, making the device suitable for various environmental conditions.

Nominal Breakdown Voltage: 7 V

The high nominal breakdown voltage ensures effective protection against voltage surges, making it reliable for transient suppression.

Maximum Reverse Current: 0.5 uA

Low maximum reverse current ensures that the device does not conduct current in the reverse direction beyond a very minimal level, enhancing its efficiency in suppression.

Package Style: SMALL OUTLINE

The small outline package style makes the device compact and easy to integrate into various circuit designs, saving space.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature indicates that the device can withstand elevated temperatures without compromising its performance, ensuring reliable operation.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diodes are specifically designed for transient suppression applications, offering high performance in clamping transient voltage spikes.

Technical Specifications

Transient Suppression Devices SZESD8351HT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Maximum Breakdown Voltage:

7.8 V

Minimum Breakdown Voltage:

5.5 V

Nominal Breakdown Voltage:

7 V

Maximum Clamping Voltage:

11.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SZESD8351HT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20