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SZESD7361XV2T1G

Onsemi

SZESD7361XV2T1G by Onsemi

SZESD7361XV2T1G by Onsemi is a unidirectional avalanche diode with a max clamping voltage of 34V. It operates b/w -55 to 125 °C and has a reverse test voltage of 15V, making it ideal for transient suppression in automotive and industrial applications.

Median Price

$0.265

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,811 parts In-Stock

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$0.352

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Chip Stock

USA . 39,000 parts In-Stock

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NAC Semi

USA . 18,000 parts In-Stock

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$0.178

18,000

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$0.178

Vyrian

USA . 4,471 parts In-Stock

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Flip Electronics

USA . 2,450 parts In-Stock

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2,450

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Distributors (Availability)

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Corphita

USA . 1,448 parts In-Stock

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$0.333

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$0.333

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Corohmni

South Africa . 208 parts In-Stock

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$0.370

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208

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Kepictronics

USA . 81,000 parts In-Stock

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81,000

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Eastek

USA . 51,000 parts In-Stock

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$0.220

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51,000

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$0.220

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TANS Electronics

Latvia . 5,711 parts In-Stock

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Kulean Microsystems

USA . 1,249 parts In-Stock

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UHIMA Technologies

Türkiye . 545 parts In-Stock

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545

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SupplyDigital Components

Austria . 305 parts In-Stock

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Problanco Electronics

Mexico . 72 parts In-Stock

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Overview

Protect your electronics with the SZESD7361XV2T1G by Onsemi, a top-of-the-line transient suppression device that offers unparalleled quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is designed for applications where protection against voltage transients is crucial. With its single configuration and small outline package style, this device is easy to install and provides maximum protection with minimal maintenance. Ensure the longevity of your electronic devices with the SZESD7361XV2T1G, offering peace of mind and unbeatable value for customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection for the transient suppression device, making it suitable for various environments.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Maximum Reverse Current: 1 uA

With a low maximum reverse current of 1 uA, this transient suppression device ensures efficient and effective suppression of transient voltages without causing added power loss or heat generation.

Reverse Test Voltage: 15 V

The reverse test voltage of 15 V indicates the device's ability to withstand high reverse voltages, providing reliable protection against overvoltage conditions.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures the device can function reliably in various environmental conditions, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and corrosion resistance, ensuring secure connections and reliable performance over time.

Minimum Breakdown Voltage: 16.5 V

The minimum breakdown voltage of 16.5 V indicates the device's ability to effectively clamp transient voltages above this level, protecting connected equipment from damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, this device is specifically designed to quickly divert excessive voltage transients away from sensitive electronic components, ensuring the system's overall reliability.

Technology: AVALANCHE

The avalanche technology used in this device allows for rapid response and high energy handling capability, ensuring effective transient voltage suppression without compromising device integrity.

Technical Specifications

Transient Suppression Devices SZESD7361XV2T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

16.5 V

Maximum Clamping Voltage:

34 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD7361XV2T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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