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SB3231-E1-T

Onsemi

SB3231-E1-T by Onsemi

SB3231-E1-T by Onsemi is a CMOS microprocessor circuit with 25 terminals, operating from 0 to 40 °C. It has a nominal voltage of 1.25V and is designed for commercial temperature grade applications. This surface-mount IC in a rectangular package is ideal for various microelectronic assemblies.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 5,734 parts In-Stock

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Digiode

USA . 2,197 parts In-Stock

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AZTECH Wire

Italy . 56 parts In-Stock

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$17.530

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Kulean Microsystems

USA . 8,195 parts In-Stock

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Problanco Electronics

Mexico . 7,657 parts In-Stock

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TANS Electronics

Latvia . 5,419 parts In-Stock

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SupplyDigital Components

Austria . 4,705 parts In-Stock

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Corphita

USA . 1,664 parts In-Stock

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Microchip USA

USA . 1,218 parts In-Stock

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Vigor

Singapore . 1,131 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 127 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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Overview

Unlock the power of innovative technology with the SB3231-E1-T by Onsemi. Known for their exceptional quality and reliability, Onsemi delivers cutting-edge solutions in the category of Other Function uPs,uCs & Peripheral ICs. This surface mount device boasts a compact rectangular package shape with 25 terminals, offering versatility in various applications. With a commercial temperature grade and CMOS technology, this product ensures efficient performance in a wide range of environments. Elevate your projects with the SB3231-E1-T and experience superior value, benefits, and advantages that only Onsemi can provide.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and convenient installation on PCBs, saving time and labor costs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the PCB and easy integration into existing designs.

No. of Terminals: 25

Sufficient number of terminals for connecting various components, providing flexibility in circuit design.

Maximum Operating Temperature: 40 °C

High maximum operating temperature ensures reliable performance even in demanding thermal conditions.

Width: 3.81 mm

Compact width allows for space-saving integration in tight layouts or designs.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Nominal Supply Voltage: 1.25 V

Low nominal supply voltage reduces power consumption and heat dissipation, contributing to overall energy efficiency.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs SB3231-E1-T attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Onsemi

Specs

Additional Features:

SEATED HGT-NOM

JESD-30 Code:

R-XXMA-N25

Length:

5.59 mm

No. of Terminals:

25

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.525 mm

Nominal Supply Voltage:

1.25 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

UNSPECIFIED

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.81 mm

Peripheral IC Type:

Trade Compliance

SB3231-E1-T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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