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SB3229-E1

Onsemi

SB3229-E1 by Onsemi

Onsemi's SB3229-E1 is a CMOS microprocessor circuit with 25 terminals, operating b/w 0-40 °C. It has a nominal voltage of 1.25V and is designed for commercial applications requiring a compact MICROELECTRONIC ASSEMBLY package style.

Median Price

$46.060

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7 parts In-Stock

1+ parts

$46.060

100+ parts

$45.140

1k+ parts

$44.220

10k+ parts

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7

$46.060

$45.140

$44.220

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 952 parts In-Stock

1+ parts

$43.757

100+ parts

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952

$43.757

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Vyrian

USA . 4,682 parts In-Stock

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4,682

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Distributors (Availability)

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AZTECH Wire

Italy . 1,201 parts In-Stock

1+ parts

$10.620

100+ parts

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1,201

$10.620

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Corphita

USA . 798 parts In-Stock

1+ parts

$41.454

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798

$41.454

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Corohmni

South Africa . 427 parts In-Stock

1+ parts

$46.060

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427

$46.060

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TANS Electronics

Latvia . 7,861 parts In-Stock

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7,861

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Kulean Microsystems

USA . 6,550 parts In-Stock

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6,550

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SupplyDigital Components

Austria . 3,512 parts In-Stock

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3,512

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Problanco Electronics

Mexico . 998 parts In-Stock

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998

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Microchip USA

USA . 432 parts In-Stock

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432

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UHIMA Technologies

Türkiye . 37 parts In-Stock

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37

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Overview

Unlock the power of innovation with the SB3229-E1 by Onsemi. Crafted with precision and expertise, this product exemplifies the quality that Onsemi is renowned for. Designed for a multitude of applications in Other Function uPs,uCs & Peripheral ICs, this surface mount marvel offers unmatched value and benefits to customers. With a sleek rectangular package style and cutting-edge technology, the SB3229-E1 delivers reliability and performance, making it the ideal choice for your next project. Elevate your designs with Onsemi's SB3229-E1 and experience the difference firsthand.

Feature Benefit Bullets

Surface Mount: YES

Surface mount packaging allows for easy and efficient PCB assembly, making it a convenient choice for manufacturers.

Package Shape: RECTANGULAR

Rectangular shape provides space-saving benefits and easy integration into electronic devices.

No. of Terminals: 25

Having 25 terminals allows for multiple connections and versatility in circuit design.

Maximum Operating Temperature: 40 °C

High maximum operating temperature ensures the product can withstand demanding environmental conditions.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for reliable performance in a wide range of operating environments.

Width: 3.81 mm

Compact width size contributes to space efficiency and enables use in small electronic devices.

Length: 5.59 mm

Short length dimension makes it suitable for applications where space is limited.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Incorporating a microprocessor circuit enhances the functionality and processing capabilities of the product.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Nominal Supply Voltage: 1.25 V

Low nominal supply voltage ensures compatibility with a variety of power sources and promotes energy efficiency.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs SB3229-E1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Onsemi

Specs

Additional Features:

SEATED HGT-NOM

JESD-30 Code:

R-XXMA-N25

Length:

5.59 mm

No. of Terminals:

25

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.525 mm

Nominal Supply Voltage:

1.25 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

UNSPECIFIED

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.81 mm

Peripheral IC Type:

Trade Compliance

SB3229-E1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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