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SB3230-E1

Onsemi

SB3230-E1 by Onsemi

SB3230-E1 by Onsemi is a CMOS microprocessor circuit with 25 terminals in a rectangular chip carrier package. It operates b/w 0-40 °C, suitable for commercial applications. With a nominal voltage of 1.25V, it's ideal for various other function uPs and uCs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,752 parts In-Stock

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Vyrian

USA . 1,398 parts In-Stock

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1,398

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Kulean Microsystems

USA . 7,748 parts In-Stock

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Problanco Electronics

Mexico . 5,591 parts In-Stock

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Corphita

USA . 1,804 parts In-Stock

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SupplyDigital Components

Austria . 1,334 parts In-Stock

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TANS Electronics

Latvia . 1,025 parts In-Stock

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UHIMA Technologies

Türkiye . 693 parts In-Stock

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Corohmni

South Africa . 206 parts In-Stock

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Overview

Elevate your electronics with the SB3230-E1 by Onsemi, a high-quality peripheral IC that offers unparalleled performance and reliability. Onsemi is known for their cutting-edge technology and innovation, making this product a top choice for a wide range of applications. With its advanced features and seamless integration, the SB3230-E1 provides customers with exceptional value, efficiency, and versatility. Upgrade your devices today and experience the benefits of this superior product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and insulation, making the product suitable for various environments.

Surface Mount: YES

Ease of installation and space-saving design make this product convenient for integration into compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on circuit boards, optimizing layout and design.

No. of Terminals: 25

Sufficient number of terminals for connecting to other components, offering flexibility in circuit design.

Package Style (Meter): CHIP CARRIER

Chip carrier style enhances thermal performance and provides mechanical protection for the internal components.

Maximum Operating Temperature: 40 °C

Wide operating temperature range ensures reliable performance in various operating conditions.

Minimum Operating Temperature: 0 °C

Ability to operate at low temperatures makes this product suitable for use in cold environments.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy soldering and connection to the circuit board.

Maximum Seated Height: 1.781 mm

Low profile design saves space and allows for compact device designs.

Width: 3.18 mm

Narrow width enables efficient placement on the circuit board and minimizes space requirements.

Length: 5.59 mm

Compact length allows for flexible placement on the circuit board, optimizing layout and design.

Temperature Grade: COMMERCIAL

Commercial-grade temperature rating ensures compatibility with standard operating conditions in commercial applications.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Integration of a microprocessor circuit offers advanced functionality and processing capabilities for diverse applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, enhancing overall performance and efficiency.

Terminal Form: BUTT

Butt terminal form offers a secure and reliable connection for stable performance in the circuit.

Nominal Supply Voltage: 1.25 V

Low supply voltage requirement minimizes power consumption and enhances energy efficiency of the product.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs SB3230-E1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Onsemi

Specs

JESD-30 Code:

R-PBCC-B25

Length:

5.59 mm

No. of Terminals:

25

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BCC

Package Shape:

Package Style (Meter):

CHIP CARRIER

Maximum Seated Height:

1.781 mm

Nominal Supply Voltage:

1.25 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

BOTTOM

Width:

3.18 mm

Peripheral IC Type:

Trade Compliance

SB3230-E1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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