Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NVTYS003N03CLTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 174A IDM, and 0.0051 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
Median Price
$1.800
Lifecycle Status
Suppliers In-Stock
4
In-Stock Inventory
1k+
DigiKey
1+ parts
100+ parts
$0.765
1k+ parts
$0.551
10k+ parts
-
Digiode
$1.235
Vyrian
$1.300
Flip Electronics
Component Stockers USA
$1.090
$0.690
$0.480
Corphita
$1.170
Corohmni
Microchip USA
$4.725
Problanco Electronics
SupplyDigital Components
Authorized Procurement Solutions
TANS Electronics
Kulean Microsystems
UHIMA Technologies
Provides durability and protection for the internal components, ensuring a long lifespan for the product.
Allows for efficient control of current flow in the desired direction.
Simplifies circuit design by incorporating a protection diode within the transistor package.
Facilitates easy installation on circuit boards, saving space and reducing assembly time.
Ensures reliable operation even under high voltage conditions.
Allows for compact placement on circuit boards, optimizing space utilization.
Enables precise control of the transistor's conductivity, enhancing performance.
Supports high-current applications, making it suitable for power-intensive tasks.
Provides protection against voltage spikes and transients, ensuring reliability in harsh conditions.
Maintains operation within safe current limits, preventing damage to the transistor.
Offers multiple connection points for versatile integration into circuits.
Handles high power levels effectively, preventing overheating and ensuring reliability.
Saves space in circuit designs, ideal for compact electronic devices.
Delivers excellent performance and efficiency compared to other transistor technologies.
Operates reliably in high-temperature environments without compromising performance.
Ensures high conductivity and performance while maintaining durability.
Maintains operation even in extreme cold conditions, making it versatile for various applications.
Provides a durable and corrosion-resistant finish, ensuring long-term reliability.
Maintains low resistance for efficient current flow and reduced power loss.
Offers flexibility in circuit design and connection options for different applications.
Simplifies circuit layout and connectivity for ease of installation.
Allows for proper soldering and reflow processes, ensuring secure connections.
Withstands high-temperature soldering processes for reliable mounting on circuit boards.
Reduces feedback interference in high-frequency applications, maintaining signal integrity.
Compliance with automotive-grade standards ensures high reliability and durability for automotive applications.
Power Field Effect Transistors (FET) NVTYS003N03CLTWG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
NVTYS003N03CLTWG Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LAN8720A-CP-TR
Microchip Technology
LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.
2N2222A
Solid State Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Tesla Elektronicke Soucastky
BSS138
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
Hi-tron Semiconductor
STM32H753IIK6
STMicroelectronics
STM32H753IIK6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and peripherals like CAN, ETHERNET, and USB. Ideal for industrial applications requiring high-speed processing and extensive connectivity options.
LL4148
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Swampscott Electronics
2N7002
Dc Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
SMBJ18CA
Littelfuse
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;
1N4148
Hy Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Sensitron Semiconductor
Diodes Incorporated
1N4148WS
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Samsung
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;
LM107H/883C
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;
ROHM
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;
LM358M
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
IRLML6402
International Rectifier
IRLML6402 by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM, 11mJ EAS, and 0.065 ohm RDS(ON). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
IRFZ44NS
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 175 Cel;
DMP3056L-7
DMP3056L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 20A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.05 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs, it has a small outline package style and can withstand temperatures as low as -55°C.
IRF3205LPBF
Infineon Technologies
IRF3205LPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). With a max power dissipation of 200W and operating temperature of 175°C, it's suitable for high-power circuits requiring efficient switching capabilities.
FDD8424H
Fairchild Semiconductor
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SISS71DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SISS71DN-T1-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. Featuring 40A max pulsed drain current and 0.082 ohm max on-resistance, it operates in enhancement mode with -50 to 150°C temperature range. Suitable for surface mount designs, this transistor offers high performance in a compact square package.
G3R450MT17D
Genesic Semiconductor
Power Field-Effect Transistors;
IRLML6246TRPBF
IRLML6246TRPBF by Infineon is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 16A and ID of 4.1A, with 0.046 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
BSS123
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: MATTE TIN; Operating Mode: ENHANCEMENT MODE;
BSC011N03LSTATMA1
Infineon's BSC011N03LSTATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0014 ohm RDS(on), and 190mJ EAS. Its small outline package and DUAL terminals make it suitable for high-power ENHANCEMENT MODE operations.
IRFR6215TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Transistor Element Material: SILICON; Case Connection: DRAIN;
IRLML0030TRPBF-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
AUIRFR5305TR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Maximum Drain-Source On Resistance: .065 ohm; JEDEC-95 Code: TO-252AA;
IRLL024NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Case Connection: DRAIN;
IPZ40N04S5L7R4ATMA1
Infineon's IPZ40N04S5L7R4ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0107 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
FDS8984
Onsemi
FDS8984 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 32mJ Avalanche Energy Rating. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS and BUILT-IN DIODE. This small outline transistor has a max operating temperature of 150°C and can handle up to 30A pulsed drain current.
BSC340N08NS3GATMA1
Infineon's BSC340N08NS3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 92A IDM, 20mJ EAS, and 0.034 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a max power dissipation of 32W in a small outline package.
FDD6637
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
BSC011N03LSIATMA1
Infineon's BSC011N03LSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0015 ohm RDS(on), and 100mJ EAS rating. Its small outline package and DUAL terminal position make it suitable for various power management systems.
BSC028N06NSTATMA1
BSC028N06NSTATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0028 ohm max RDS(on), and 400A IDM. It's used for switching applications due to its built-in diode, small outline package style, and high pulsed drain current capacity.
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NVTYS025P04M8LTWG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44.1 W; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 171 A;
NVTYS003N04CTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Case Connection: DRAIN; Terminal Form: UNSPECIFIED;
NVTYS010N04CTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
NVTYS005N06CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 76 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
NVTYS009N08HLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Pulsed Drain Current (IDM): 300 A; Minimum DS Breakdown Voltage: 80 V;
NVTYS005N04CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Minimum DS Breakdown Voltage: 40 V; Moisture Sensitivity Level (MSL): 1;
NVTYS010N06CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; JESD-30 Code: R-PDSO-X5; Terminal Position: DUAL;
NVTYS002N03CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Feedback Capacitance (Crss): 43 pF; Maximum Drain Current (ID): 29 A;
NVTYS004N03CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 51.5 W; Terminal Form: UNSPECIFIED; Maximum Time At Peak Reflow Temperature (s): 30;
NVTYS006N06CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 114 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN;
NVTYS007N04CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; JESD-30 Code: R-PDSO-X5; Maximum Pulsed Drain Current (IDM): 214 A;
NVTYS008N06CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Maximum Drain-Source On Resistance: .008 ohm; Moisture Sensitivity Level (MSL): 1;
NVTYS004N04CTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Maximum Operating Temperature: 175 Cel; Maximum Feedback Capacitance (Crss): 21 pF;
NVTYS010N04CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Terminal Finish: Matte Tin (Sn) - annealed; Minimum DS Breakdown Voltage: 40 V;
NVTYS003N04CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Case Connection: DRAIN; Terminal Finish: Matte Tin (Sn) - annealed;
NVTYS007N04CTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Reference Standard: AEC-Q101; Terminal Finish: Matte Tin (Sn) - annealed;
NVTYS005N04CTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
NVTYD015N04CLT1G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-X6; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 40 V;
NVTYS004N04CLTWG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 20 A;
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