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NTSB20120CTT4G

Onsemi

NTSB20120CTT4G by Onsemi

NTSB20120CTT4G by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 10A. It operates b/w -40 to 150 °C, ideal for applications requiring high efficiency. This small outline package with matte tin finish is designed for surface mount assembly.

Median Price

$0.647

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,360 parts In-Stock

1+ parts

-

100+ parts

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$0.710

10k+ parts

$0.710

4,360

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$0.710

$0.710

Flip Electronics (Authorized)

USA . 3,200 parts In-Stock

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3,200

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Rochester

USA . 90 parts In-Stock

1+ parts

-

100+ parts

$0.584

1k+ parts

$0.485

10k+ parts

$0.432

90

-

$0.584

$0.485

$0.432

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,288 parts In-Stock

1+ parts

$0.697

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2,288

$0.697

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Vyrian

USA . 244 parts In-Stock

1+ parts

$0.710

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244

$0.710

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Flip Electronics

USA . 800 parts In-Stock

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800

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Distributors (Availability)

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Corphita

USA . 1,025 parts In-Stock

1+ parts

$0.661

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1,025

$0.661

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Corohmni

South Africa . 77 parts In-Stock

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$0.710

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77

$0.710

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QUARKTWIN TECHNOLOGY LTD

USA . 16,478 parts In-Stock

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SupplyDigital Components

Austria . 8,014 parts In-Stock

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Kulean Microsystems

USA . 5,036 parts In-Stock

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5,036

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TANS Electronics

Latvia . 4,975 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,658 parts In-Stock

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4,658

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Problanco Electronics

Mexico . 4,170 parts In-Stock

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UHIMA Technologies

Türkiye . 563 parts In-Stock

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563

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Metaverse IC Inc.

Canada . 400 parts In-Stock

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Kepictronics

USA . 300 parts In-Stock

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300

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Perfect Parts

USA . 162 parts In-Stock

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162

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Elevate your efficiency with the NTSB20120CTT4G by Onsemi. As a leading manufacturer in the Diodes & Rectifiers category, Onsemi delivers top-notch quality and reliability in their products. This device, with its common cathode configuration and Schottky technology, offers customers unparalleled performance and value. Whether you're looking to enhance power management or optimize circuit design, this rectifier diode is the perfect solution. Trust Onsemi for cutting-edge technology that drives your applications forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and allows for reliable performance in various operating conditions.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration makes it easier to integrate into circuits and the presence of 2 elements enhances efficiency.

Surface Mount: YES

Surface mount design simplifies installation and saves space on the circuit board.

Package Shape: RECTANGULAR

Rectangular shape allows for a compact and efficient design.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance even in demanding conditions.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching, making this diode highly efficient.

Maximum Output Current: 10 A

High output current capability allows for handling of significant loads.

Technical Specifications

Diodes & Rectifiers NTSB20120CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.72 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTSB20120CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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