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NTSB30120CTG

Onsemi

NTSB30120CTG by Onsemi

NTSB30120CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 15A. It operates b/w -40 to 150°C, featuring a peak reflow temperature of 260°C. Ideal for applications requiring high efficiency due to its low forward voltage of 0.76V.

Median Price

$0.875

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.710

10k+ parts

$0.710

2,100

-

-

$0.710

$0.710

Flip Electronics (Authorized)

USA . 1,100 parts In-Stock

1+ parts

-

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1,100

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Rochester

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$1.040

1k+ parts

$0.863

10k+ parts

$0.769

150

-

$1.040

$0.863

$0.769

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.456

100+ parts

-

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50

$0.456

-

-

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Digiode

USA . 798 parts In-Stock

1+ parts

$0.810

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798

$0.810

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DigiKey Marketplace

USA . 2,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.710

10k+ parts

-

2,100

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-

$0.710

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Flip Electronics

USA . 1,100 parts In-Stock

1+ parts

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1,100

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Vyrian

USA . 983 parts In-Stock

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983

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LWI Electronics Inc

India . 9 parts In-Stock

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 422 parts In-Stock

1+ parts

$0.447

100+ parts

-

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422

$0.447

-

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Continental Prestige Electronics

USA . 3,885 parts In-Stock

1+ parts

$0.455

100+ parts

-

1k+ parts

-

10k+ parts

$0.446

3,885

$0.455

-

-

$0.446

Argo Parts USA

USA . 327 parts In-Stock

1+ parts

$0.455

100+ parts

-

1k+ parts

-

10k+ parts

$0.442

327

$0.455

-

-

$0.442

Ampacity Inc.

Singapore . 943 parts In-Stock

1+ parts

$0.600

100+ parts

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943

$0.600

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Corphita

USA . 567 parts In-Stock

1+ parts

$0.768

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567

$0.768

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Problanco Electronics

Mexico . 6,920 parts In-Stock

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Kulean Microsystems

USA . 6,708 parts In-Stock

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6,708

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TANS Electronics

Latvia . 5,951 parts In-Stock

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5,951

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SupplyDigital Components

Austria . 4,153 parts In-Stock

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4,153

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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UHIMA Technologies

Türkiye . 647 parts In-Stock

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647

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Kepictronics

USA . 160 parts In-Stock

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160

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Overview

Discover the NTSB30120CTG by Onsemi, a high-quality diode and rectifier that offers unparalleled efficiency and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is designed for a wide range of applications where precision and performance are paramount. With its common cathode configuration, small outline package style, and Schottky technology, this diode ensures optimal functionality even in extreme temperatures. Trust Onsemi to deliver top-notch products like the NTSB30120CTG that provide maximum output current, low forward voltage, and durable construction. Upgrade your electronic projects with the best - choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various environments.

Configuration: COMMON CATHODE, 2 ELEMENTS

Allows for easy circuit design and connection.

Surface Mount: YES

Facilitates easy and efficient PCB assembly.

Application: EFFICIENCY

Designed for efficient performance in various applications.

Maximum Operating Temperature: 150 °C

Can handle high temperatures without compromising performance.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching, improving overall efficiency.

Maximum Repetitive Peak Reverse Voltage: 120 V

Can handle high reverse voltages, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers NTSB30120CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.76 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTSB30120CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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