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NTSB20U100CTT4G

Onsemi

NTSB20U100CTT4G by Onsemi

NTSB20U100CTT4G by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 10A. It operates b/w -40 to 150 °C, ideal for efficiency applications. This small outline package with gull wing terminals has a peak reflow temperature of 260°C.

Median Price

$0.439

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

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9,315

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-

$0.630

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Flip Electronics (Authorized)

USA . 9,315 parts In-Stock

1+ parts

-

100+ parts

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9,315

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-

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Rochester

USA . 3,955 parts In-Stock

1+ parts

-

100+ parts

$0.423

1k+ parts

$0.351

10k+ parts

$0.313

3,955

-

$0.423

$0.351

$0.313

Verical

USA . 3,200 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.439

10k+ parts

$0.391

3,200

-

-

$0.439

$0.391

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,459 parts In-Stock

1+ parts

$0.279

100+ parts

-

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1,459

$0.279

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Digiode

USA . 591 parts In-Stock

1+ parts

$0.330

100+ parts

-

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10k+ parts

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591

$0.330

-

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Flip Electronics

USA . 9,315 parts In-Stock

1+ parts

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9,315

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DigiKey Marketplace

USA . 3,200 parts In-Stock

1+ parts

-

100+ parts

$0.360

1k+ parts

-

10k+ parts

-

3,200

-

$0.360

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 103 parts In-Stock

1+ parts

$0.279

100+ parts

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103

$0.279

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Corphita

USA . 1,896 parts In-Stock

1+ parts

$0.312

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1,896

$0.312

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Kulean Microsystems

USA . 7,386 parts In-Stock

1+ parts

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7,386

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TANS Electronics

Latvia . 6,297 parts In-Stock

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6,297

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SupplyDigital Components

Austria . 5,772 parts In-Stock

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5,772

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Continental Prestige Electronics

USA . 3,200 parts In-Stock

1+ parts

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$0.279

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3,200

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$0.279

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Problanco Electronics

Mexico . 1,402 parts In-Stock

1+ parts

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1,402

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UHIMA Technologies

Türkiye . 419 parts In-Stock

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419

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Overview

Upgrade your efficiency with the NTSB20U100CTT4G by Onsemi. This high-quality diode rectifier is perfect for a wide range of applications, offering unparalleled performance and reliability. With Onsemi's reputation for excellence in manufacturing, you can trust that this product will deliver superior results every time. Say goodbye to downtime and hello to increased productivity with the NTSB20U100CTT4G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good thermal and mechanical properties, ensuring durability and reliability of the diode.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy connection in circuits, and the presence of 2 elements adds redundancy and reliability.

Surface Mount: YES

Being surface mountable makes installation and soldering process easier and more efficient.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement on circuit boards and efficient use of space.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes it suitable for compact electronic devices where space is a constraint.

Application: EFFICIENCY

Designed for efficiency, which is crucial in power electronics applications to minimize energy loss.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures that the diode can withstand harsh operating conditions without compromising its performance.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in a wide range of environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance.

Terminal Position: SINGLE

Single terminal position simplifies the installation process.

Case Connection: CATHODE

Cathode case connection simplifies the circuit design and connection.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time helps in preventing overheating of the diode during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliability of the connection.

Diode Type: RECTIFIER DIODE

Rectifier diode is ideal for converting alternating current (AC) to direct current (DC) in various electronic circuits.

Maximum Forward Voltage (VF): 0.68 V

Low forward voltage drop (0.68 V) helps in minimizing power loss and improving efficiency.

Maximum Output Current: 10 A

High maximum output current capacity (10 A) makes it suitable for applications requiring high current handling capability.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, making it suitable for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical stability and ease of soldering during installation.

No. of Elements: 2

Having 2 diode elements adds redundancy and reliability to the overall circuit design.

Maximum Repetitive Peak Reverse Voltage: 100 V

High repetitive peak reverse voltage (100 V) makes it suitable for applications requiring voltage rectification.

Maximum Non Repetitive Peak Forward Current: 150 A

High non-repetitive peak forward current capability (150 A) ensures the diode can handle momentary high current surges.

Diode Element Material: SILICON

Silicon material offers good thermal properties and reliability for the diode element.

Technical Specifications

Diodes & Rectifiers NTSB20U100CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTSB20U100CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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