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NTSB30100CTT4G

Onsemi

NTSB30100CTT4G by Onsemi

NTSB30100CTT4G by Onsemi is a Schottky rectifier diode with 100V peak reverse voltage and 15A output current. It has a common cathode configuration, small outline package style, and matte tin terminal finish. Ideal for applications requiring high efficiency, it operates b/w -40 °C to 150°C temperature range.

Median Price

$1.990

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 10 parts In-Stock

1+ parts

$1.690

100+ parts

$1.380

1k+ parts

$1.130

10k+ parts

$1.040

10

$1.690

$1.380

$1.130

$1.040

Farnell

UK . 10 parts In-Stock

1+ parts

$1.990

100+ parts

-

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10

$1.990

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-

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DigiKey

USA . 7,774 parts In-Stock

1+ parts

$2.340

100+ parts

$1.024

1k+ parts

$0.773

10k+ parts

$0.652

7,774

$2.340

$1.024

$0.773

$0.652

EBV Elektronik

Germany . 1,600 parts In-Stock

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-

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1,600

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Distributors (In-Stock)

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Digiode

USA . 2,186 parts In-Stock

1+ parts

$1.178

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2,186

$1.178

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Vyrian

USA . 307 parts In-Stock

1+ parts

$1.240

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307

$1.240

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Sensible Micro Corp

USA . 11,345 parts In-Stock

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11,345

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Chip Stock

USA . 6,830 parts In-Stock

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6,830

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Flip Electronics

USA . 2,400 parts In-Stock

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2,400

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 285 parts In-Stock

1+ parts

$1.116

100+ parts

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285

$1.116

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Corohmni

South Africa . 219 parts In-Stock

1+ parts

$1.240

100+ parts

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219

$1.240

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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iodParts Technologies Inc.

India . 12,000 parts In-Stock

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12,000

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Microchip USA

USA . 11,396 parts In-Stock

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11,396

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QUARKTWIN TECHNOLOGY LTD

USA . 6,887 parts In-Stock

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6,887

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TANS Electronics

Latvia . 6,808 parts In-Stock

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6,808

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SupplyDigital Components

Austria . 6,799 parts In-Stock

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6,799

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A-Z Elektronik GmbH

Germany . 5,162 parts In-Stock

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5,162

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Perfect Parts

USA . 4,610 parts In-Stock

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4,610

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Problanco Electronics

Mexico . 2,790 parts In-Stock

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2,790

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Kulean Microsystems

USA . 1,338 parts In-Stock

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1,338

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UHIMA Technologies

Türkiye . 426 parts In-Stock

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426

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Overview

Discover the power of the NTSB30100CTT4G by Onsemi, a top-quality diode & rectifier designed for efficiency in various applications. With a common cathode configuration and Schottky technology, this product offers a maximum output current of 15A and a maximum repetitive peak reverse voltage of 100V. Manufactured by Onsemi, known for their reliable and innovative electronic components, this diode ensures optimal performance and durability. Ideal for a wide range of projects, the NTSB30100CTT4G is perfect for customers looking for high-value solutions that deliver exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the diodes, making them suitable for a variety of applications.

Maximum Reverse Current: 500 uA

The low maximum reverse current ensures efficient operation and minimizes power loss in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in a wide range of environmental conditions.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC current, making them ideal for efficiency applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed compared to standard diodes, enhancing the efficiency of the circuit.

Technical Specifications

Diodes & Rectifiers NTSB30100CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

500 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTSB30100CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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