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NTSB30100CT-1G

Onsemi

NTSB30100CT-1G by Onsemi

NTSB30100CT-1G by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 15A. It operates b/w -40 to 150 °C, ideal for applications requiring high efficiency. With a max repetitive peak reverse voltage of 100V, it is suitable for various electronic circuits.

Median Price

$0.925

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,356 parts In-Stock

1+ parts

-

100+ parts

$0.852

1k+ parts

$0.707

10k+ parts

$0.630

9,356

-

$0.852

$0.707

$0.630

DigiKey

USA . 9,356 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.110

10k+ parts

-

9,356

-

-

$1.110

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Verical

USA . 8,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.925

10k+ parts

$0.825

8,300

-

-

$0.925

$0.825

Flip Electronics (Authorized)

USA . 2,100 parts In-Stock

1+ parts

-

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2,100

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Distributors (In-Stock)

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Vyrian

USA . 876 parts In-Stock

1+ parts

$0.603

100+ parts

-

1k+ parts

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876

$0.603

-

-

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Digiode

USA . 936 parts In-Stock

1+ parts

$0.695

100+ parts

-

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936

$0.695

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Flip Electronics

USA . 2,100 parts In-Stock

1+ parts

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2,100

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Distributors (Availability)

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Corohmni

South Africa . 410 parts In-Stock

1+ parts

$0.603

100+ parts

-

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-

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410

$0.603

-

-

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Corphita

USA . 2,364 parts In-Stock

1+ parts

$0.659

100+ parts

-

1k+ parts

-

10k+ parts

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2,364

$0.659

-

-

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Component Stockers USA

USA . 9,013 parts In-Stock

1+ parts

$0.750

100+ parts

$0.710

1k+ parts

$0.640

10k+ parts

-

9,013

$0.750

$0.710

$0.640

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Microchip USA

USA . 5,396 parts In-Stock

1+ parts

$4.550

100+ parts

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5,396

$4.550

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Continental Prestige Electronics

USA . 9,356 parts In-Stock

1+ parts

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100+ parts

$0.577

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9,356

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$0.577

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SupplyDigital Components

Austria . 5,872 parts In-Stock

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5,872

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A-Z Elektronik GmbH

Germany . 5,003 parts In-Stock

1+ parts

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5,003

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TANS Electronics

Latvia . 2,733 parts In-Stock

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2,733

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Kulean Microsystems

USA . 1,414 parts In-Stock

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1,414

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Problanco Electronics

Mexico . 840 parts In-Stock

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840

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Kepictronics

USA . 700 parts In-Stock

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700

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UHIMA Technologies

Türkiye . 660 parts In-Stock

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660

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Perfect Parts

USA . 67 parts In-Stock

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67

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Overview

Discover the Onsemi NTSB30100CT-1G, a high-quality diode rectifier designed for efficiency in various applications. With its innovative technology and reliable performance, this product offers customers unmatched value and benefits. From its common cathode configuration to its impressive maximum output current of 15A, the NTSB30100CT-1G by Onsemi is the perfect choice for those looking for a superior diode solution. Trust in Onsemi's reputation for excellence and choose the NTSB30100CT-1G for your next project.

Feature Benefit Bullets

Package Body Material: Plastic/Epoxy

Provides durability and protection for the diodes, ensuring longevity and reliability.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, making it suitable for a wide range of applications.

Maximum Forward Voltage (VF): 0.68 V

Low forward voltage drop results in higher efficiency and lower power dissipation.

Maximum Output Current: 15 A

Capable of handling high currents, suitable for power applications.

Technology: Schottky

Schottky diodes have low forward voltage, fast switching speed, and low leakage current, making them ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers NTSB30100CT-1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSB30100CT-1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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