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NTSB20120CT-1G

Onsemi

NTSB20120CT-1G by Onsemi

NTSB20120CT-1G by Onsemi is a Schottky rectifier diode with common cathode configuration. It has a max forward voltage of 0.72V and can handle up to 10A output current. This diode is ideal for applications requiring high efficiency, with an operating temperature range from -40°C to 150°C.

Median Price

$0.643

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 49 parts In-Stock

1+ parts

$1.240

100+ parts

-

1k+ parts

$0.768

10k+ parts

$0.560

49

$1.240

-

$0.768

$0.560

Rochester

USA . 107,174 parts In-Stock

1+ parts

-

100+ parts

$0.631

1k+ parts

$0.524

10k+ parts

$0.467

107,174

-

$0.631

$0.524

$0.467

Verical

USA . 62,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.655

10k+ parts

$0.584

62,550

-

-

$0.655

$0.584

DigiKey

USA . 4,797 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.360

4,797

-

-

-

$0.360

Flip Electronics (Authorized)

USA . 4,797 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,797

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 382 parts In-Stock

1+ parts

$0.515

100+ parts

-

1k+ parts

-

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382

$0.515

-

-

-

Chip Stock

USA . 51,000 parts In-Stock

1+ parts

-

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51,000

-

-

-

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Vyrian

USA . 7,730 parts In-Stock

1+ parts

-

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7,730

-

-

-

-

Flip Electronics

USA . 4,797 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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-

4,797

-

-

-

-

LIBRA Elektronik GmbH

Germany . 75 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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75

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,857 parts In-Stock

1+ parts

$0.488

100+ parts

-

1k+ parts

-

10k+ parts

-

1,857

$0.488

-

-

-

Corohmni

South Africa . 212 parts In-Stock

1+ parts

$0.542

100+ parts

-

1k+ parts

-

10k+ parts

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212

$0.542

-

-

-

Component Stockers USA

USA . 112,116 parts In-Stock

1+ parts

$0.550

100+ parts

$0.520

1k+ parts

$0.470

10k+ parts

$0.470

112,116

$0.550

$0.520

$0.470

$0.470

Andel Nordic

Denmark . 2,622 parts In-Stock

1+ parts

$1.140

100+ parts

-

1k+ parts

$0.796

10k+ parts

$0.796

2,622

$1.140

-

$0.796

$0.796

Microchip USA

USA . 298 parts In-Stock

1+ parts

$8.000

100+ parts

$7.950

1k+ parts

$7.920

10k+ parts

$7.900

298

$8.000

$7.950

$7.920

$7.900

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

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56,986

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-

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TANS Electronics

Latvia . 7,276 parts In-Stock

1+ parts

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7,276

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-

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A-Z Elektronik GmbH

Germany . 6,779 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,779

-

-

-

-

Kulean Microsystems

USA . 4,928 parts In-Stock

1+ parts

-

100+ parts

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4,928

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 4,866 parts In-Stock

1+ parts

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4,866

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-

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SupplyDigital Components

Austria . 2,731 parts In-Stock

1+ parts

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2,731

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-

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Problanco Electronics

Mexico . 2,649 parts In-Stock

1+ parts

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2,649

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-

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Perfect Parts

USA . 750 parts In-Stock

1+ parts

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100+ parts

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750

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UHIMA Technologies

Türkiye . 481 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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481

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Kepictronics

USA . 150 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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150

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-

Overview

Upgrade your efficiency with the NTSB20120CT-1G by Onsemi! This high-quality diode rectifier is designed for maximum performance, offering a common cathode configuration with two elements to enhance functionality. Perfect for a variety of applications, this product ensures reliability and durability in all operating conditions. Experience the value and benefits that only Onsemi can provide, with a product that exceeds expectations in both quality and performance. Choose the NTSB20120CT-1G for a seamless and efficient solution to your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diodes, ensuring durability and reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient and convenient circuit design.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures stable performance even in demanding environments.

Technology: SCHOTTKY

Schottky diode technology offers low forward voltage drop and fast switching, ideal for high-frequency applications.

Maximum Output Current: 10 A

High maximum output current capability of 10 A allows for handling of large loads with ease.

Technical Specifications

Diodes & Rectifiers NTSB20120CT-1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.72 V

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSB20120CT-1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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