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NTSB30100CTG

Onsemi

NTSB30100CTG by Onsemi

NTSB30100CTG by Onsemi is a Schottky rectifier diode with 100V peak reverse voltage and 15A output current. It has a common cathode configuration, small outline package style, and matte tin terminal finish. Ideal for applications requiring high efficiency, it operates b/w -40 to 150°C temperature range.

Median Price

$1.181

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.181

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100

$1.181

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Chip Stock

USA . 6,850 parts In-Stock

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6,850

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Vyrian

USA . 1,607 parts In-Stock

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1,607

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Digiode

USA . 1,179 parts In-Stock

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1,179

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 385 parts In-Stock

1+ parts

$1.134

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385

$1.134

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Ampacity Inc.

Singapore . 1,401 parts In-Stock

1+ parts

$2.010

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1,401

$2.010

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AZTECH Wire

Italy . 890 parts In-Stock

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$18.546

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890

$18.546

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Problanco Electronics

Mexico . 7,262 parts In-Stock

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7,262

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SupplyDigital Components

Austria . 7,035 parts In-Stock

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7,035

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Perfect Parts

USA . 3,960 parts In-Stock

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3,960

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Kulean Microsystems

USA . 1,906 parts In-Stock

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1,906

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Corphita

USA . 1,701 parts In-Stock

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1,701

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TANS Electronics

Latvia . 1,071 parts In-Stock

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1,071

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$1.157

1k+ parts

$1.122

10k+ parts

$1.098

1,000

-

$1.157

$1.122

$1.098

UHIMA Technologies

Türkiye . 646 parts In-Stock

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646

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Kepictronics

USA . 130 parts In-Stock

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130

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Overview

Unleash the power of efficiency with the NTSB30100CTG by Onsemi. This high-quality diode and rectifier offers unparalleled performance and reliability, thanks to its manufacturer, Onsemi. Perfect for a wide range of applications, this product is a game-changer in the industry. Experience the benefits of its cutting-edge technology, maximum output current of 15A, and a maximum repetitive peak reverse voltage of 100V. Elevate your projects with the NTSB30100CTG and see the difference it makes in your efficiency and productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the diodes and ensures durability.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Reverse Current: 500 uA

Low reverse current ensures energy efficiency and proper functioning.

Application: EFFICIENCY

Designed for high efficiency applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various environments.

Technology: SCHOTTKY

Schottky diode technology provides fast switching speeds and low forward voltage drop.

Technical Specifications

Diodes & Rectifiers NTSB30100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

500 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTSB30100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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