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NTSB30U100CTT4G

Onsemi

NTSB30U100CTT4G by Onsemi

NTSB30U100CTT4G by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 15A. It operates b/w -40 to 150 °C, has a max reverse voltage of 100V, and is ideal for applications requiring high efficiency.

Median Price

$1.180

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,194 parts In-Stock

1+ parts

-

100+ parts

$1.180

1k+ parts

$0.979

10k+ parts

$0.873

1,194

-

$1.180

$0.979

$0.873

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,683 parts In-Stock

1+ parts

$0.920

100+ parts

-

1k+ parts

-

10k+ parts

-

1,683

$0.920

-

-

-

Chip Stock

USA . 61,000 parts In-Stock

1+ parts

-

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61,000

-

-

-

-

Vyrian

USA . 8,676 parts In-Stock

1+ parts

-

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8,676

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,695 parts In-Stock

1+ parts

$0.871

100+ parts

-

1k+ parts

-

10k+ parts

-

1,695

$0.871

-

-

-

Corohmni

South Africa . 332 parts In-Stock

1+ parts

$0.968

100+ parts

-

1k+ parts

-

10k+ parts

-

332

$0.968

-

-

-

AZTECH Wire

Italy . 380 parts In-Stock

1+ parts

$10.390

100+ parts

-

1k+ parts

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380

$10.390

-

-

-

Component Stockers USA

USA . 686 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

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686

$99.990

-

-

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Problanco Electronics

Mexico . 5,817 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,817

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-

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TANS Electronics

Latvia . 5,461 parts In-Stock

1+ parts

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5,461

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Kulean Microsystems

USA . 4,593 parts In-Stock

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4,593

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SupplyDigital Components

Austria . 3,548 parts In-Stock

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3,548

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Perfect Parts

USA . 3,338 parts In-Stock

1+ parts

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100+ parts

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3,338

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UHIMA Technologies

Türkiye . 614 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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614

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Overview

Discover the NTSB30U100CTT4G by Onsemi, a top-quality diode & rectifier that promises reliability and efficiency in various applications. Manufactured by Onsemi, a trusted name in the industry, this product offers exceptional value with its common cathode configuration and Schottky technology. Ideal for maximizing performance and minimizing power loss, this diode is perfect for a wide range of uses. Experience the benefits of high-quality materials, superior design, and cutting-edge technology with the NTSB30U100CTT4G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient and reliable circuit connections.

Surface Mount: YES

Enables easy and efficient PCB assembly.

Maximum Reverse Current: 675 uA

Ensures low power consumption and efficient operation.

Package Shape: RECTANGULAR

Facilitates easy integration into various electronic devices.

No. of Terminals: 2

Simplifies the wiring and connection process.

Package Style (Meter): SMALL OUTLINE

Allows for compact and space-saving designs.

Application: EFFICIENCY

Designed for high-efficiency applications.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliability.

Minimum Operating Temperature: -40 °C

Operates effectively in a wide range of temperature conditions.

Terminal Finish: MATTE TIN

Provides a stable and reliable terminal connection.

Terminal Position: SINGLE

Simplifies the installation and connection process.

Case Connection: CATHODE

Ensures proper polarity and connection in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands reflow soldering processes efficiently.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications.

Maximum Forward Voltage (VF): 0.8 V

Provides efficient forward voltage characteristics.

Maximum Output Current: 15 A

Capable of handling high output currents.

Technology: SCHOTTKY

Employs Schottky technology for improved efficiency and performance.

Terminal Form: GULL WING

Facilitates easy and secure PCB mounting.

No. of Elements: 2

Includes multiple elements for enhanced functionality.

Maximum Repetitive Peak Reverse Voltage: 100 V

Suitable for applications requiring high reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 160 A

Capable of handling high temporary peak currents.

Diode Element Material: SILICON

Utilizes silicon material for reliable diode performance.

Technical Specifications

Diodes & Rectifiers NTSB30U100CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

675 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTSB30U100CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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