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NTSB40120CTT4G

Onsemi

NTSB40120CTT4G by Onsemi

NTSB40120CTT4G by Onsemi is a Schottky rectifier diode with 120V max reverse voltage and 20A max output current. It has a common cathode configuration, small outline package style, and matte tin terminal finish. Ideal for applications requiring high efficiency, it operates b/w -40°C to 150°C temperature range.

Median Price

$0.932

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 54,413 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.120

10k+ parts

-

54,413

-

-

$1.120

-

Rochester

USA . 54,231 parts In-Stock

1+ parts

-

100+ parts

$0.898

1k+ parts

$0.746

10k+ parts

$0.665

54,231

-

$0.898

$0.746

$0.665

Verical

USA . 52,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.932

10k+ parts

$0.831

52,400

-

-

$0.932

$0.831

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 959 parts In-Stock

1+ parts

$0.700

100+ parts

-

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-

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959

$0.700

-

-

-

DigiKey Marketplace

USA . 54,813 parts In-Stock

1+ parts

-

100+ parts

$0.770

1k+ parts

-

10k+ parts

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54,813

-

$0.770

-

-

Vyrian

USA . 48,845 parts In-Stock

1+ parts

-

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48,845

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Nova Conductors

Japan . 450 parts In-Stock

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-

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-

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450

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.165

100+ parts

$0.150

1k+ parts

$0.135

10k+ parts

-

200

$0.165

$0.150

$0.135

-

Aztec Data Supply Inc.

USA . 4,261 parts In-Stock

1+ parts

$0.180

100+ parts

-

1k+ parts

-

10k+ parts

-

4,261

$0.180

-

-

-

Ampacity Inc.

Singapore . 49,071 parts In-Stock

1+ parts

$0.630

100+ parts

-

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-

10k+ parts

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49,071

$0.630

-

-

-

Corphita

USA . 1,603 parts In-Stock

1+ parts

$0.663

100+ parts

-

1k+ parts

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1,603

$0.663

-

-

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Corohmni

South Africa . 479 parts In-Stock

1+ parts

$0.737

100+ parts

-

1k+ parts

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10k+ parts

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479

$0.737

-

-

-

Semicontronic

India . 49,175 parts In-Stock

1+ parts

$1.360

100+ parts

$1.326

1k+ parts

$1.319

10k+ parts

-

49,175

$1.360

$1.326

$1.319

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Microchip USA

USA . 6,952 parts In-Stock

1+ parts

$4.615

100+ parts

-

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10k+ parts

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6,952

$4.615

-

-

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Continental Prestige Electronics

USA . 55,613 parts In-Stock

1+ parts

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100+ parts

$0.880

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55,613

-

$0.880

-

-

A-Z Elektronik GmbH

Germany . 7,410 parts In-Stock

1+ parts

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7,410

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-

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TANS Electronics

Latvia . 4,936 parts In-Stock

1+ parts

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4,936

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Problanco Electronics

Mexico . 4,654 parts In-Stock

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4,654

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SupplyDigital Components

Austria . 2,315 parts In-Stock

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2,315

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-

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Kulean Microsystems

USA . 1,673 parts In-Stock

1+ parts

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1,673

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Argo Parts USA

USA . 1,187 parts In-Stock

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1,187

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Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

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500

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UHIMA Technologies

Türkiye . 319 parts In-Stock

1+ parts

-

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319

-

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Overview

Discover the unparalleled quality of the NTSB40120CTT4G by Onsemi, a cutting-edge diode & rectifier that delivers superior performance and reliability. Manufactured by industry leader Onsemi, this product offers unmatched efficiency and versatility for a wide range of applications. With a common cathode configuration and Schottky technology, this diode boasts a maximum forward voltage of 0.71V and a maximum output current of 20A. Experience the value and benefits of choosing Onsemi for your electronic components needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good heat dissipation and protection, making the product durable and reliable.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy circuit design and the presence of 2 elements increases flexibility in applications.

Surface Mount: YES

Surface mount design allows for easy and efficient PCB assembly.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product is suitable for a wide range of industrial applications.

Diode Type: RECTIFIER DIODE

Rectifier diodes are known for their low forward voltage drop, resulting in high efficiency and low power loss.

Maximum Output Current: 20 A

The high output current rating ensures that this diode can handle heavy loads, making it suitable for power electronics applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage, making them ideal for high frequency applications.

Maximum Repetitive Peak Reverse Voltage: 120 V

The high reverse voltage rating provides protection against overvoltage conditions in the circuit.

Technical Specifications

Diodes & Rectifiers NTSB40120CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTSB40120CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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