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NTSB40100CT-1G

Onsemi

NTSB40100CT-1G by Onsemi

NTSB40100CT-1G by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 20A. It operates b/w -40 to 150 °C, ideal for efficiency applications. With a max reverse voltage of 100V and forward voltage of 0.8V, it offers reliable performance in various electronic circuits.

Median Price

$0.880

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 10,737 parts In-Stock

1+ parts

$0.473

100+ parts

-

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10,737

$0.473

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Chip1Stop

Japan . 10,737 parts In-Stock

1+ parts

$0.880

100+ parts

-

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10,737

$0.880

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Rochester

USA . 166,153 parts In-Stock

1+ parts

-

100+ parts

$0.679

1k+ parts

$0.564

10k+ parts

$0.503

166,153

-

$0.679

$0.564

$0.503

DigiKey

USA . 166,153 parts In-Stock

1+ parts

-

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$0.880

10k+ parts

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166,153

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-

$0.880

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Verical

USA . 110,650 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.069

10k+ parts

$0.953

110,650

-

-

$1.069

$0.953

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 586 parts In-Stock

1+ parts

$0.449

100+ parts

-

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586

$0.449

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Vyrian

USA . 2,074 parts In-Stock

1+ parts

$0.473

100+ parts

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2,074

$0.473

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 80 parts In-Stock

1+ parts

$0.426

100+ parts

-

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80

$0.426

-

-

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Corohmni

South Africa . 185 parts In-Stock

1+ parts

$0.473

100+ parts

-

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185

$0.473

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Microchip USA

USA . 3,960 parts In-Stock

1+ parts

$5.265

100+ parts

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3,960

$5.265

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Continental Prestige Electronics

USA . 166,120 parts In-Stock

1+ parts

-

100+ parts

$0.668

1k+ parts

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166,120

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$0.668

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Problanco Electronics

Mexico . 7,168 parts In-Stock

1+ parts

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7,168

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Kulean Microsystems

USA . 5,899 parts In-Stock

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5,899

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SupplyDigital Components

Austria . 5,380 parts In-Stock

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5,380

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TANS Electronics

Latvia . 1,126 parts In-Stock

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1,126

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UHIMA Technologies

Türkiye . 755 parts In-Stock

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755

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Overview

Discover the NTSB40100CT-1G by Onsemi, a cutting-edge diode and rectifier that offers unmatched quality and reliability. With a focus on efficiency, this product is perfect for a wide range of applications. Onsemi, known for their top-notch manufacturing processes, ensures that each component meets the highest standards. The NTSB40100CT-1G provides customers with value, benefits, and advantages that will enhance their projects and streamline their operations. Experience the difference with Onsemi's exceptional diodes and rectifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diodes, ensuring reliability and durability.

Maximum Reverse Current: 1000 uA

Low reverse current helps in minimizing power loss and improving efficiency of the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various circuit designs.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in demanding environments without compromising performance.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making them ideal for power supply applications.

Technical Specifications

Diodes & Rectifiers NTSB40100CT-1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

1000 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSB40100CT-1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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