Loading...

NTD20N06

Onsemi

NTD20N06 by Onsemi

NTD20N06 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.046 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and can handle up to 60A Pulsed Drain Current. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and operates at temperatures up to 175 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,126 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,126

-

-

-

-

Digiode

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,300

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

A-Z Elektronik GmbH

Germany . 6,849 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,849

-

-

-

-

Kulean Microsystems

USA . 6,388 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,388

-

-

-

-

TANS Electronics

Latvia . 3,840 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,840

-

-

-

-

Problanco Electronics

Mexico . 3,048 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,048

-

-

-

-

Corphita

USA . 1,242 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,242

-

-

-

-

SupplyDigital Components

Austria . 1,039 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,039

-

-

-

-

Corohmni

South Africa . 389 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

389

-

-

-

-

UHIMA Technologies

Türkiye . 18 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18

-

-

-

-

Overview

Discover the power of the NTD20N06 by Onsemi, a top-quality Power FET that offers unmatched performance and reliability. Manufactured by the trusted brand Onsemi, this N-CHANNEL transistor is perfect for switching applications. With a high DS Breakdown Voltage of 60V and a Maximum Drain Current of 20A, this transistor delivers exceptional power while maintaining efficiency. Its compact design and built-in diode make it ideal for a wide range of electronic projects. Upgrade your devices with the NTD20N06 and experience the difference in performance and quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components from external factors, making the product long-lasting.

Polarity or Channel Type: N-CHANNEL

Suitable for high-power applications and offers efficient switching capabilities.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the circuit design by having a built-in diode and reduces the need for additional components.

Transistor Application: SWITCHING

Designed for efficient power switching applications, making it ideal for various electronic devices.

Surface Mount: YES

Enables easy mounting on the PCB, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 60 V

Ensures reliable performance and protects the transistor from voltage spikes or breakdowns.

Maximum Pulsed Drain Current (IDM): 60 A

Capable of handling high pulsed currents, suitable for applications requiring power surges.

Maximum Drain Current (Abs) (ID): 20 A

Provides sufficient current handling capacity for various power applications.

Maximum Power Dissipation (Abs): 60 W

Efficiently dissipates heat generated during operation, ensuring stable performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and reliability in power switching applications.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures, suitable for industrial and automotive applications.

Maximum Drain-Source On Resistance: 0.046 ohm

Low on-resistance results in minimal power loss and higher efficiency in switching applications.

Technical Specifications

Power Field Effect Transistors (FET) NTD20N06 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

170 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.046 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

60 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTD20N06 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20