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NSS60601MZ4T3G

Onsemi

NSS60601MZ4T3G by Onsemi

NSS60601MZ4T3G by Onsemi is a NPN BJT transistor with 60V VCEO, 6A IC, and 100MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 2W and operating temp up to 150 °C, it offers reliable performance in various electronic circuits.

Median Price

$0.264

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1 parts In-Stock

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$0.124

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1

$0.124

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Mouser Electronics

USA . 228 parts In-Stock

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$0.980

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$0.398

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$0.277

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$0.232

228

$0.980

$0.398

$0.277

$0.232

DigiKey

USA . 181 parts In-Stock

1+ parts

$0.980

100+ parts

$0.398

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$0.277

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$0.214

181

$0.980

$0.398

$0.277

$0.214

Rochester

USA . 7,991 parts In-Stock

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-

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$0.264

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$0.220

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$0.196

7,991

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$0.264

$0.220

$0.196

Verical

USA . 7,991 parts In-Stock

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$0.245

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$0.245

Chip1Stop

Japan . 1 parts In-Stock

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Digiode

USA . 1,543 parts In-Stock

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$0.121

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Vyrian

USA . 1,274 parts In-Stock

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$0.127

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ACDS - Activité Composants Distribution Service

France . 1,944 parts In-Stock

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Chip Stock

USA . 565 parts In-Stock

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Speed Components Ltd

Israel . 500 parts In-Stock

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Corphita

USA . 2,417 parts In-Stock

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$0.114

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Corohmni

South Africa . 187 parts In-Stock

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$0.127

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,234 parts In-Stock

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Kepictronics

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Kulean Microsystems

USA . 8,124 parts In-Stock

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Problanco Electronics

Mexico . 7,034 parts In-Stock

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SupplyDigital Components

Austria . 6,299 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,750 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

UK . 1,944 parts In-Stock

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Metaverse IC Inc.

Canada . 1,300 parts In-Stock

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TANS Electronics

Latvia . 1,063 parts In-Stock

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UHIMA Technologies

Türkiye . 396 parts In-Stock

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Overview

Enhance your electronic projects with the NSS60601MZ4T3G by Onsemi, a top-quality NPN Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this transistor offers reliability and performance for switching applications. With a maximum collector-emitter voltage of 60V and a peak reflow temperature of 260 °C, this transistor ensures smooth operation even in demanding conditions. Its small outline package design and dual terminal position make it easy to integrate into your circuit designs. Trust Onsemi for cutting-edge technology that delivers exceptional value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for a variety of environments and applications.

Polarity or Channel Type: NPN

NPN polarity allows for efficient switching operations in electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability enables easy and efficient integration into circuit boards.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2 W, this transistor can handle moderate power levels.

Maximum Collector-Emitter Voltage: 60 V

A high maximum collector-emitter voltage rating ensures compatibility with a wide range of circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can function reliably even in elevated temperature environments.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency of 100 MHz indicates fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSS60601MZ4T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1475 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

NSS60601MZ4T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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