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NSS60200LT1G

Onsemi

NSS60200LT1G by Onsemi

NSS60200LT1G by Onsemi is a PNP BJT transistor with 60V VCEO, 2A IC, and 100MHz fT. Ideal for switching applications, it has a small outline package style and Gull Wing terminals for surface mount assembly. With a max operating temp of 150°C, it offers fast turn-on/off times of 530ns/180ns.

Median Price

$0.148

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 829 parts In-Stock

1+ parts

$0.707

100+ parts

$0.289

1k+ parts

$0.216

10k+ parts

$0.175

829

$0.707

$0.289

$0.216

$0.175

Verical

USA . 15,000 parts In-Stock

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$0.148

15,000

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$0.148

Rochester

USA . 329 parts In-Stock

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$0.122

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$0.102

10k+ parts

$0.090

329

-

$0.122

$0.102

$0.090

Distributors (In-Stock)

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Digiode

USA . 843 parts In-Stock

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$0.095

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843

$0.095

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Freelance Electronics

USA . 2,906 parts In-Stock

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$0.120

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$0.126

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$0.119

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2,906

$0.120

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Nova Conductors

Japan . 10 parts In-Stock

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$0.168

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$0.168

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NAC Semi

USA . 60,000 parts In-Stock

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$0.134

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$0.134

Chip Stock

USA . 28,018 parts In-Stock

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Vyrian

USA . 15,121 parts In-Stock

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IBS Electronics

USA . 9,000 parts In-Stock

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$0.122

9,000

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$0.122

Cyclops Electronics Ltd

UK . 3,325 parts In-Stock

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ComSIT USA

USA . 2,185 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,180 parts In-Stock

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Bristol Electronics

USA . 1,007 parts In-Stock

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100+ parts

$0.263

1k+ parts

$0.105

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1,007

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$0.263

$0.105

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Microfarads

USA . 570 parts In-Stock

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570

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Technoshack Inc.

Canada . 547 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 12,954 parts In-Stock

1+ parts

$0.081

100+ parts

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12,954

$0.081

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Corphita

USA . 1,741 parts In-Stock

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$0.090

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1,741

$0.090

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Corohmni

South Africa . 436 parts In-Stock

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$0.100

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436

$0.100

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Argo Parts USA

USA . 5,093 parts In-Stock

1+ parts

$0.168

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$0.163

5,093

$0.168

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$0.163

Continental Prestige Electronics

USA . 1,365 parts In-Stock

1+ parts

$0.538

100+ parts

$0.258

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$0.145

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$0.137

1,365

$0.538

$0.258

$0.145

$0.137

Perfect Parts

USA . 95,654 parts In-Stock

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SupplyDigital Components

Austria . 7,555 parts In-Stock

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Problanco Electronics

Mexico . 6,101 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,069 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Kepictronics

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Glotronic Ltd.

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TANS Electronics

Latvia . 1,492 parts In-Stock

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Lixinc

USA . 1,426 parts In-Stock

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UHIMA Technologies

Türkiye . 880 parts In-Stock

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Kulean Microsystems

USA . 708 parts In-Stock

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708

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Netroflash

USA . 50 parts In-Stock

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$0.164

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$0.159

10k+ parts

$0.156

50

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$0.164

$0.159

$0.156

Overview

Looking to enhance your electronic devices with top-quality components? Look no further than the NSS60200LT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient Small Signal Bipolar Junction Transistors (BJTs) like this PNP transistor designed for switching applications. With a maximum collector-emitter voltage of 60V and a high DC current gain of 100, this transistor offers superior performance and durability. Whether you're working on consumer electronics or industrial equipment, the NSS60200LT1G provides the value and versatility you need for your projects. Trust Onsemi for excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in switching applications, making this transistor suitable for such purposes.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and makes it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto PCBs, saving space and simplifying assembly.

No. of Terminals: 3

Three terminals provide necessary connectivity for various circuit configurations.

Maximum Power Dissipation (Abs): 0.46 W

With a high maximum power dissipation, this transistor can handle elevated power levels without overheating.

Maximum Operating Temperature: 150 °C

Capability to operate at high temperatures makes it suitable for demanding environments and applications.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can handle higher voltage levels without breakdown.

Maximum Turn On Time (ton): 530 ns

Fast turn-on time ensures quick response, making it suitable for high-speed switching applications.

Maximum Collector Current (IC): 2 A

High maximum collector current allows for handling of larger current loads.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables high-speed operation, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSS60200LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

180 ns

Maximum Turn On Time (ton):

530 ns

Trade Compliance

NSS60200LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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