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NSS60201LT1G

Onsemi

NSS60201LT1G by Onsemi

NSS60201LT1G by Onsemi is a NPN BJT transistor with 60V VCEO, 2A IC, and 100MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. With a max operating temp of 150°C, it offers fast turn-on/off times of 155ns/1220ns.

Median Price

$0.234

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 13,204 parts In-Stock

1+ parts

$0.640

100+ parts

$0.255

1k+ parts

$0.173

10k+ parts

$0.147

13,204

$0.640

$0.255

$0.173

$0.147

DigiKey

USA . 10,418 parts In-Stock

1+ parts

$0.640

100+ parts

$0.255

1k+ parts

$0.173

10k+ parts

$0.128

10,418

$0.640

$0.255

$0.173

$0.128

Newark

USA . 780 parts In-Stock

1+ parts

$0.687

100+ parts

$0.302

1k+ parts

$0.220

10k+ parts

$0.206

780

$0.687

$0.302

$0.220

$0.206

Arrow

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

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$0.140

30,000

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$0.140

Verical

USA . 30,000 parts In-Stock

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$0.140

30,000

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$0.140

Farnell

UK . 12,418 parts In-Stock

1+ parts

-

100+ parts

$0.227

1k+ parts

$0.136

10k+ parts

$0.128

12,418

-

$0.227

$0.136

$0.128

Element14

Singapore . 12,418 parts In-Stock

1+ parts

-

100+ parts

$0.234

1k+ parts

$0.140

10k+ parts

$0.133

12,418

-

$0.234

$0.140

$0.133

Rochester

USA . 10,125 parts In-Stock

1+ parts

-

100+ parts

$0.147

1k+ parts

$0.122

10k+ parts

$0.109

10,125

-

$0.147

$0.122

$0.109

RS (Exports)

UK . 4,225 parts In-Stock

1+ parts

-

100+ parts

$0.236

1k+ parts

$0.161

10k+ parts

$0.135

4,225

-

$0.236

$0.161

$0.135

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 185 parts In-Stock

1+ parts

$0.114

100+ parts

-

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185

$0.114

-

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Freelance Electronics

USA . 2,925 parts In-Stock

1+ parts

$0.140

100+ parts

$0.147

1k+ parts

$0.139

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2,925

$0.140

$0.147

$0.139

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Chip Stock

USA . 48,500 parts In-Stock

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48,500

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NAC Semi

USA . 15,000 parts In-Stock

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$0.178

15,000

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$0.178

Vyrian

USA . 13,996 parts In-Stock

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13,996

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Cyclops Electronics Ltd

UK . 6,292 parts In-Stock

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6,292

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IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

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$0.233

6,000

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$0.233

Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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Nova Conductors

Japan . 38 parts In-Stock

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38

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Distributors (Availability)

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Ampacity Inc.

Singapore . 14,178 parts In-Stock

1+ parts

$0.099

100+ parts

-

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14,178

$0.099

-

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Corphita

USA . 343 parts In-Stock

1+ parts

$0.108

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343

$0.108

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Corohmni

South Africa . 78 parts In-Stock

1+ parts

$0.118

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78

$0.118

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Aztec Data Supply Inc.

USA . 1,854 parts In-Stock

1+ parts

$1.890

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1,854

$1.890

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RC Electronics

USA . 96,473 parts In-Stock

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Lixinc

USA . 12,292 parts In-Stock

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Problanco Electronics

Mexico . 6,689 parts In-Stock

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6,689

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Continental Prestige Electronics

USA . 6,503 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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TANS Electronics

Latvia . 4,335 parts In-Stock

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Kulean Microsystems

USA . 3,803 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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$0.170

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$0.170

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,094 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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A-Z Elektronik GmbH

Germany . 1,620 parts In-Stock

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1,620

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SupplyDigital Components

Austria . 590 parts In-Stock

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590

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Futuretech Components

Singapore . 522 parts In-Stock

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522

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UHIMA Technologies

Türkiye . 116 parts In-Stock

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116

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Overview

Unlock the power of innovation with the NSS60201LT1G by Onsemi, a top-tier manufacturer known for their high-quality electronic components. This small signal Bipolar Junction Transistor (BJT) is designed for switching applications, offering customers seamless performance and reliability. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 100, this NPN transistor provides superior functionality in a compact, surface-mount package. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in switching circuits.

Surface Mount: YES

Surface mount capability enables easy and compact soldering onto circuit boards, saving space and facilitating automated assembly.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on circuit boards and minimizes wasted space.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and are suitable for surface mount applications.

Maximum Power Dissipation: 0.71 W

High power dissipation rating ensures the transistor can handle various loads without overheating.

Minimum DC Current Gain (hFE): 100

High current gain ensures reliable amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function in diverse environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating ensures durability and reliability in high-voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in semiconductor devices.

Maximum Turn On Time (ton): 155 ns

Fast turn-on time improves efficiency in switching applications.

Maximum Collector Current (IC): 2 A

High collector current rating allows the transistor to handle larger currents without damage.

Maximum Turn Off Time (toff): 1220 ns

Fast turn-off time ensures quick response in switching circuits and reduces switching losses.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and reliability in surface mount applications.

Terminal Position: DUAL

Dual terminal position facilitates easy soldering and connections in circuit boards.

Maximum Time At Peak Reflow Temperature (s): 40

Short time at peak reflow temperature ensures the integrity of the transistor during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable and robust solder joints.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast response and performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSS60201LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1220 ns

Maximum Turn On Time (ton):

155 ns

Trade Compliance

NSS60201LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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