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NSS60600MZ4T3G

Onsemi

NSS60600MZ4T3G by Onsemi

NSS60600MZ4T3G by Onsemi is a PNP BJT transistor with 60V VCEO, 6A IC, and 100MHz fT. Ideal for switching applications, it has a small outline package and Gull Wing terminals for surface mount assembly. With a max power dissipation of 2W and operating temp up to 150°C, it offers efficient performance in various electronic circuits.

Median Price

$0.561

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,544 parts In-Stock

1+ parts

$0.890

100+ parts

$0.361

1k+ parts

$0.250

10k+ parts

$0.229

6,544

$0.890

$0.361

$0.250

$0.229

DigiKey

USA . 1,974 parts In-Stock

1+ parts

$0.890

100+ parts

$0.361

1k+ parts

$0.250

10k+ parts

$0.191

1,974

$0.890

$0.361

$0.250

$0.191

Verical

USA . 4,000 parts In-Stock

1+ parts

-

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$0.215

4,000

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$0.215

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.232

1k+ parts

$0.193

10k+ parts

$0.172

4,000

-

$0.232

$0.193

$0.172

Distributors (In-Stock)

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Digiode

USA . 545 parts In-Stock

1+ parts

$0.180

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545

$0.180

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Vyrian

USA . 281 parts In-Stock

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$0.190

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281

$0.190

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Carlin Systems, Inc.

USA . 3,009 parts In-Stock

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3,009

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LWI Electronics Inc

India . 3 parts In-Stock

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Corphita

USA . 1,541 parts In-Stock

1+ parts

$0.171

100+ parts

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1,541

$0.171

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Corohmni

South Africa . 449 parts In-Stock

1+ parts

$0.190

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449

$0.190

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Component Stockers USA

USA . 20,217 parts In-Stock

1+ parts

$0.590

100+ parts

$0.350

1k+ parts

$0.220

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-

20,217

$0.590

$0.350

$0.220

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Perfect Parts

USA . 17,914 parts In-Stock

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Lixinc

USA . 14,027 parts In-Stock

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TANS Electronics

Latvia . 8,218 parts In-Stock

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8,218

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 7,065 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,560 parts In-Stock

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6,560

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SupplyDigital Components

Austria . 4,279 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,142 parts In-Stock

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RC Electronics

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 489 parts In-Stock

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489

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Overview

Looking to upgrade your electronic devices with high-quality components? Look no further than the NSS60600MZ4T3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Bipolar Junction Transistors that are perfect for switching applications. With a maximum collector-emitter voltage of 60V and a maximum collector current of 6A, this PNP transistor offers reliable performance and enhanced efficiency. Upgrade your devices today with the NSS60600MZ4T3G and experience the superior quality and value that Onsemi brings to the table.

Feature Benefit Bullets

Dielectric Material: CERAMIC

Ceramic is a reliable dielectric material known for its stability and high insulation resistance, making this capacitor suitable for a wide range of applications.

Package Shape: RECTANGULAR PACKAGE

Rectangular package shape allows for easy installation and space-saving on circuit boards.

Multi-layer: Yes

Multi-layer design increases capacitance density and reduces the overall size of the capacitor.

Packing Method: TR, PAPER, 7 INCH

Secure packing method ensures the safe transportation and storage of the capacitors.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the risk of errors.

Package Style (Meter): SMT

Surface-mount technology (SMT) package style allows for automated assembly, saving time and cost in production.

Terminal Shape: WRAPAROUND

Wraparound terminals provide a strong connection and are suitable for automated soldering processes.

Negative Tolerance: 5%

A negative tolerance of 5% ensures that the capacitor's actual capacitance will not fall below this specified value.

Temperature Characteristics Code: X7R

X7R temperature characteristic code indicates stable performance over a wide range of temperatures, making it suitable for various operating conditions.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this capacitor can withstand elevated temperatures without compromising performance.

Capacitor Type: CERAMIC CAPACITOR

Being a ceramic capacitor, it offers high reliability, low cost, and good capacitance stability over time.

Minimum Operating Temperature: -55 °C

Capable of operating in extreme cold conditions down to -55°C, making it versatile for various environments.

Temperature Coef (ppm/°C): 15%

A temperature coefficient of 15% ensures minimal variation in capacitance over a wide temperature range.

Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier

Matte tin finish with nickel barrier provides good solderability and corrosion resistance for long-term reliability.

Height: 0.85 mm

Low profile height of 0.85 mm enables compact design and space-constrained applications.

Width: 1.6 mm

Compact width of 1.6 mm allows for tight placement of components on the PCB.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies assembly and allows for high-density mounting on circuit boards.

Length: 3.2 mm

Compact length of 3.2 mm saves space on the PCB and enables efficient circuit layout.

Positive Tolerance: 5 %

A positive tolerance of 5% ensures that the actual capacitance will not exceed 5% of the specified value, providing consistency in performance.

Capacitance: 0.0022 uF

With a capacitance value of 0.0022uF, this capacitor is suitable for various filtering and decoupling applications.

Rated DC Voltage (URdc): 100 V

With a high rated DC voltage of 100V, this capacitor can handle high voltage applications reliably.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSS60600MZ4T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

685 ns

Maximum Turn On Time (ton):

280 ns

Trade Compliance

NSS60600MZ4T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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