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NSS60101DMTTBG

Onsemi

NSS60101DMTTBG by Onsemi

NSS60101DMTTBG by Onsemi is a NPN BJT transistor for switching applications. Features include VCEsat of 0.2V, hFE of 35, and max IC of 1A. Ideal for small outline packages requiring high-speed performance in a wide temperature range.

Median Price

$0.245

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,352 parts In-Stock

1+ parts

$0.930

100+ parts

$0.377

1k+ parts

$0.261

10k+ parts

$0.198

2,352

$0.930

$0.377

$0.261

$0.198

Mouser Electronics

USA . 16 parts In-Stock

1+ parts

$0.930

100+ parts

$0.377

1k+ parts

$0.262

10k+ parts

$0.226

16

$0.930

$0.377

$0.262

$0.226

Verical

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.182

24,000

-

-

-

$0.182

Rochester

USA . 2,892 parts In-Stock

1+ parts

-

100+ parts

$0.245

1k+ parts

$0.204

10k+ parts

$0.182

2,892

-

$0.245

$0.204

$0.182

Element14

Singapore . 141 parts In-Stock

1+ parts

-

100+ parts

$0.170

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-

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141

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$0.170

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,186 parts In-Stock

1+ parts

$0.191

100+ parts

-

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1,186

$0.191

-

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Nova Conductors

Japan . 89 parts In-Stock

1+ parts

$0.296

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89

$0.296

-

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Bristol Electronics

USA . 24,000 parts In-Stock

1+ parts

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24,000

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IBS Electronics

USA . 9,018 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.367

10k+ parts

-

9,018

-

-

$0.367

-

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.412

3,000

-

-

-

$0.412

Vyrian

USA . 2,600 parts In-Stock

1+ parts

-

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2,600

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-

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Flip Electronics

USA . 1,055 parts In-Stock

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1,055

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Prism Electronics

USA . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,538 parts In-Stock

1+ parts

$0.162

100+ parts

-

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2,538

$0.162

-

-

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Corphita

USA . 2,149 parts In-Stock

1+ parts

$0.181

100+ parts

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2,149

$0.181

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Corohmni

South Africa . 341 parts In-Stock

1+ parts

$0.190

100+ parts

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341

$0.190

-

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Continental Prestige Electronics

USA . 3,792 parts In-Stock

1+ parts

$0.296

100+ parts

-

1k+ parts

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10k+ parts

$0.290

3,792

$0.296

-

-

$0.290

Argo Parts USA

USA . 1,092 parts In-Stock

1+ parts

$0.296

100+ parts

-

1k+ parts

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10k+ parts

$0.287

1,092

$0.296

-

-

$0.287

iodParts Technologies Inc.

India . 24,000 parts In-Stock

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24,000

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Lixinc

USA . 16,064 parts In-Stock

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16,064

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Kulean Microsystems

USA . 8,318 parts In-Stock

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8,318

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SupplyDigital Components

Austria . 7,613 parts In-Stock

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7,613

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TANS Electronics

Latvia . 6,817 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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A-Z Elektronik GmbH

Germany . 6,000 parts In-Stock

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6,000

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Problanco Electronics

Mexico . 4,064 parts In-Stock

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4,064

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.280

10k+ parts

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3,000

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$0.280

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UHIMA Technologies

Türkiye . 145 parts In-Stock

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145

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

$0.290

1k+ parts

$0.281

10k+ parts

$0.275

100

-

$0.290

$0.281

$0.275

Overview

Unleash the power of innovation with the NSS60101DMTTBG by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This small signal bipolar junction transistor is perfect for switching applications, offering seamless performance and efficiency. With a low VCEsat of 0.2V and a minimum DC current gain of 35, this transistor provides exceptional value and benefits to customers looking for high-performance components. Elevate your projects with the NSS60101DMTTBG by Onsemi and experience the difference in quality and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the transistors, making them suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile for different circuit designs.

Maximum VCEsat: 0.2 V

Low VCEsat value indicates high efficiency and minimal power loss in the switching operation, contributing to energy efficiency.

Maximum Power Dissipation: 2.27 W

With a high power dissipation capacity, this product can handle moderate to high power levels without overheating, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating allows this transistor to be used in circuits with higher voltage requirements, expanding its application range.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures stable and consistent amplification performance, making this transistor reliable in signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for harsh environmental conditions and high-power applications.

Nominal Transition Frequency (fT): 180 MHz

The high nominal transition frequency indicates fast response and switching capabilities, making this transistor ideal for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSS60101DMTTBG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

2.27 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

NSS60101DMTTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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